FGL60N100BNTDTU
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onsemi FGL60N100BNTDTU

Manufacturer No:
FGL60N100BNTDTU
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1000V 60A 180W TO264
Delivery:
Payment:
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Product Introduction

Overview

The FGL60N100BNTDTU is a high-power Insulated Gate Bipolar Transistor (IGBT) produced by onsemi (formerly Fairchild Semiconductor). This component is part of the FGL60N100BNTD series and is known for its high voltage and current handling capabilities. It is designed for use in various high-power applications requiring efficient switching and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vce)1000 V
Current Rating (Ic)60 A
Power Dissipation (Pd)180 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeThrough Hole TO-264-3

Key Features

  • NPT (Non-Punch Through) and Trench technology for improved performance and reliability.
  • High voltage and current ratings, making it suitable for high-power applications.
  • Low switching losses and high efficiency.
  • Rugged and reliable design for harsh operating conditions.

Applications

The FGL60N100BNTDTU IGBT is designed for use in a variety of high-power applications, including:

  • Power supplies and inverters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power systems and automation.

Q & A

  1. What is the voltage rating of the FGL60N100BNTDTU IGBT? The voltage rating is 1000 V.
  2. What is the current rating of the FGL60N100BNTDTU IGBT? The current rating is 60 A.
  3. What is the power dissipation of the FGL60N100BNTDTU IGBT? The power dissipation is 180 W.
  4. What is the operating temperature range of the FGL60N100BNTDTU IGBT? The operating temperature range is from -55°C to +150°C.
  5. What package type does the FGL60N100BNTDTU IGBT use? It uses a Through Hole TO-264-3 package.
  6. Is the FGL60N100BNTDTU IGBT still in production? No, this product is no longer manufactured.
  7. What technology does the FGL60N100BNTDTU IGBT employ? It employs NPT (Non-Punch Through) and Trench technology.
  8. What are some common applications for the FGL60N100BNTDTU IGBT? Common applications include power supplies, motor drives, renewable energy systems, and industrial power systems.
  9. Where can I find detailed specifications for the FGL60N100BNTDTU IGBT? Detailed specifications can be found in the datasheet available from onsemi’s official website or through distributors like Mouser and Digi-Key.
  10. What are the key features of the FGL60N100BNTDTU IGBT? Key features include high voltage and current ratings, low switching losses, and a rugged design for harsh operating conditions.

Product Attributes

IGBT Type:NPT and Trench
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 60A
Power - Max:180 W
Switching Energy:- 
Input Type:Standard
Gate Charge:275 nC
Td (on/off) @ 25°C:140ns/630ns
Test Condition:600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr):1.2 µs
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Supplier Device Package:TO-264-3
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Same Series
FGL60N100BNTD
FGL60N100BNTD
1000V, 60A, NPT TRENCH IGBT

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