FGL60N100BNTDTU
  • Share:

onsemi FGL60N100BNTDTU

Manufacturer No:
FGL60N100BNTDTU
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1000V 60A 180W TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGL60N100BNTDTU is a high-power Insulated Gate Bipolar Transistor (IGBT) produced by onsemi (formerly Fairchild Semiconductor). This component is part of the FGL60N100BNTD series and is known for its high voltage and current handling capabilities. It is designed for use in various high-power applications requiring efficient switching and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vce)1000 V
Current Rating (Ic)60 A
Power Dissipation (Pd)180 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeThrough Hole TO-264-3

Key Features

  • NPT (Non-Punch Through) and Trench technology for improved performance and reliability.
  • High voltage and current ratings, making it suitable for high-power applications.
  • Low switching losses and high efficiency.
  • Rugged and reliable design for harsh operating conditions.

Applications

The FGL60N100BNTDTU IGBT is designed for use in a variety of high-power applications, including:

  • Power supplies and inverters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power systems and automation.

Q & A

  1. What is the voltage rating of the FGL60N100BNTDTU IGBT? The voltage rating is 1000 V.
  2. What is the current rating of the FGL60N100BNTDTU IGBT? The current rating is 60 A.
  3. What is the power dissipation of the FGL60N100BNTDTU IGBT? The power dissipation is 180 W.
  4. What is the operating temperature range of the FGL60N100BNTDTU IGBT? The operating temperature range is from -55°C to +150°C.
  5. What package type does the FGL60N100BNTDTU IGBT use? It uses a Through Hole TO-264-3 package.
  6. Is the FGL60N100BNTDTU IGBT still in production? No, this product is no longer manufactured.
  7. What technology does the FGL60N100BNTDTU IGBT employ? It employs NPT (Non-Punch Through) and Trench technology.
  8. What are some common applications for the FGL60N100BNTDTU IGBT? Common applications include power supplies, motor drives, renewable energy systems, and industrial power systems.
  9. Where can I find detailed specifications for the FGL60N100BNTDTU IGBT? Detailed specifications can be found in the datasheet available from onsemi’s official website or through distributors like Mouser and Digi-Key.
  10. What are the key features of the FGL60N100BNTDTU IGBT? Key features include high voltage and current ratings, low switching losses, and a rugged design for harsh operating conditions.

Product Attributes

IGBT Type:NPT and Trench
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 60A
Power - Max:180 W
Switching Energy:- 
Input Type:Standard
Gate Charge:275 nC
Td (on/off) @ 25°C:140ns/630ns
Test Condition:600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr):1.2 µs
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Supplier Device Package:TO-264-3
0 Remaining View Similar

In Stock

$4.60
208

Please send RFQ , we will respond immediately.

Same Series
FGL60N100BNTD
FGL60N100BNTD
1000V, 60A, NPT TRENCH IGBT

Related Product By Categories

FGY160T65SPD-F085
FGY160T65SPD-F085
onsemi
650V FS GEN3 TRENCH IGBT
STGD19N40LZ
STGD19N40LZ
STMicroelectronics
IGBT 20V 40A DPAK
STGB10H60DF
STGB10H60DF
STMicroelectronics
IGBT 600V 20A 115W D2PAK
STGP40V60F
STGP40V60F
STMicroelectronics
IGBT 600V 80A 283W TO220AB
FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109
onsemi
IGBT 1200V 50A 312W TO3P
STGWT40H65DFB
STGWT40H65DFB
STMicroelectronics
IGBT 650V 80A 283W TO3P-3L
STGB30M65DF2
STGB30M65DF2
STMicroelectronics
IGBT 650V 30A D2PAK
NGTB50N65FL2WG
NGTB50N65FL2WG
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
STGD7NB60ST4
STGD7NB60ST4
STMicroelectronics
IGBT 600V 15A 55W DPAK
STGWA15M120DF3
STGWA15M120DF3
STMicroelectronics
IGBT 1200V 30A 259W
FGH40T120SMDL4
FGH40T120SMDL4
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
NGD18N40ACLBT4G
NGD18N40ACLBT4G
Littelfuse Inc.
IGBT 430V 15A 115W DPAK-3

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD