Overview
The NGTB50N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Field Stop II Trench construction. This device is designed to provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. It is well-suited for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter Voltage | VCES | 650 | V |
| Collector Current @ TC = 25°C | IC | 100 | A |
| Collector Current @ TC = 100°C | IC | 50 | A |
| Diode Forward Current @ TC = 25°C | IF | 100 | A |
| Diode Forward Current @ TC = 100°C | IF | 50 | A |
| Pulsed Collector Current, Tpulse Limited by TJmax | ICM | 200 | A |
| Short-circuit Withstand Time | tSC | 5 μs | |
| Gate-emitter Voltage | VGE | ±20 | V |
| Operating Junction Temperature Range | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
| Thermal Resistance Junction-to-Case for IGBT | RJC | 0.36 | °C/W |
| Thermal Resistance Junction-to-Case for Diode | RJC | 0.60 | °C/W |
| Thermal Resistance Junction-to-Ambient | RJA | 40 | °C/W |
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature (TJmax) of 175°C
- Soft and Fast Co-packaged Free Wheeling Diode with Low Forward Voltage
- Optimized for High Speed Switching
- 5 μs Short-circuit Capability
- Pb-Free Device
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding
Q & A
- What is the maximum collector-emitter voltage of the NGTB50N65FL2WG IGBT?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 100 A at 25°C and 50 A at 100°C.
- What is the short-circuit withstand time of the device?
The short-circuit withstand time is 5 μs.
- What is the operating junction temperature range of the NGTB50N65FL2WG?
The operating junction temperature range is -55°C to +175°C.
- Does the NGTB50N65FL2WG include a free wheeling diode?
- What are the typical applications of the NGTB50N65FL2WG IGBT?
The typical applications include solar inverters, uninterruptible power supplies (UPS), and welding.
- What is the thermal resistance junction-to-case for the IGBT and diode?
The thermal resistance junction-to-case is 0.36 °C/W for the IGBT and 0.60 °C/W for the diode.
- Is the NGTB50N65FL2WG a Pb-Free device?
- What is the maximum gate-emitter voltage of the NGTB50N65FL2WG?
The maximum gate-emitter voltage (VGE) is ±20 V.
- What is the collector-emitter saturation voltage (VCEsat) of the NGTB50N65FL2WG?
The collector-emitter saturation voltage (VCEsat) is between 1.50 V and 1.80 V.
