Overview
The STGWT28IH125DF is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the IH series and is designed using an advanced proprietary trench gate field-stop structure. It is optimized for both conduction and switching losses, making it suitable for various high-efficiency applications. The IGBT is co-packaged with a low drop forward voltage freewheeling diode, enhancing its overall efficiency in resonant and soft-switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 1250 | V |
| Continuous collector current at TC = 25 °C | 60 | A |
| Continuous collector current at TC = 100 °C | 30 | A |
| Pulsed collector current | 120 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 25 A | 2.0 - 2.5 | V |
| Forward on-voltage (VF) at IF = 25 A | 1.2 - 1.6 | V |
| Thermal resistance junction-case (RthJC) for IGBT | 0.4 | °C/W |
| Thermal resistance junction-case (RthJC) for diode | 1.47 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 50 | °C/W |
| Operating junction temperature (TJ) | -55 to 175 | °C |
| Storage temperature range (TSTG) | -55 to 150 | °C |
Key Features
- Designed for soft commutation only
- Minimized tail current
- Tight parameters distribution for safe paralleling
- Low VF soft recovery co-packaged diode
- Low thermal resistance
- Lead-free package
- Optimized performance in both conduction and switching losses
Applications
- Induction heating
- Microwave oven
- Resonant converters
Q & A
- What is the maximum collector-emitter voltage (VCE) of the STGWT28IH125DF?
The maximum collector-emitter voltage (VCE) is 1250 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 60 A at 25 °C and 30 A at 100 °C.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at 25 A?
The typical collector-emitter saturation voltage (VCE(sat)) at 25 A is 2.0 V to 2.5 V.
- What is the thermal resistance junction-case (RthJC) for the IGBT and diode?
The thermal resistance junction-case (RthJC) is 0.4 °C/W for the IGBT and 1.47 °C/W for the diode.
- What are the operating and storage temperature ranges?
The operating junction temperature range is -55 to 175 °C, and the storage temperature range is -55 to 150 °C.
- What are the typical applications of the STGWT28IH125DF?
The typical applications include induction heating, microwave ovens, and resonant converters.
- Is the package lead-free?
- What is the maximum pulsed collector current?
The maximum pulsed collector current is 120 A.
- What is the gate-emitter voltage range?
The gate-emitter voltage range is ±20 V.
- Does the device come with a co-packaged diode?
