STGWT20IH125DF
  • Share:

STMicroelectronics STGWT20IH125DF

Manufacturer No:
STGWT20IH125DF
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 1250V 40A 259W TO-3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGWT20IH125DF from STMicroelectronics is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronics applications. This IGBT features a trench gate field-stop structure, which optimizes both conduction and switching losses. It is part of the IH series and is specifically tailored for soft commutation and resonant switching applications. The device includes a co-packaged freewheeling diode with a low forward voltage drop, enhancing overall efficiency.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vces)1250V
Continuous Collector Current at TC = 25°C20A
Pulsed Collector Current80A
Gate-Emitter Voltage (Vge)±20V
Collector-Emitter Saturation Voltage (Vce(sat))2.0 - 2.5V
Maximum Junction Temperature (Tj)-55 to 175°C
Maximum Power Dissipation (Ptot)259W
Thermal Resistance Junction-Case (RthJC)0.58°C/W
PackageTO-3P
MountingTHT

Key Features

  • Designed for soft commutation only
  • Minimized tail current
  • Tight parameters distribution for safe paralleling
  • Very low VF soft recovery co-packaged diode
  • Low thermal resistance
  • Lead-free package
  • Advanced proprietary trench gate field-stop structure

Applications

  • Induction heating
  • Microwave oven
  • Resonant converters
  • Motor control
  • UPS and PFC systems

Q & A

  1. What is the maximum collector-emitter voltage of the STGWT20IH125DF IGBT?
    The maximum collector-emitter voltage is 1250 V.
  2. What is the continuous collector current at 25°C for this IGBT?
    The continuous collector current at 25°C is 20 A.
  3. What is the maximum junction temperature for this device?
    The maximum junction temperature is 175°C.
  4. What type of package does the STGWT20IH125DF come in?
    The STGWT20IH125DF comes in a TO-3P package.
  5. Is the STGWT20IH125DF suitable for high-frequency applications?
    Yes, it is designed for resonant and soft-switching applications, making it suitable for high-frequency use.
  6. Does the STGWT20IH125DF include a freewheeling diode?
    Yes, it includes a co-packaged freewheeling diode with a low forward voltage drop.
  7. What is the maximum power dissipation of the STGWT20IH125DF?
    The maximum power dissipation is 259 W.
  8. What are the typical applications of the STGWT20IH125DF?
    Typical applications include induction heating, microwave ovens, resonant converters, motor control, and UPS/PFC systems.
  9. Is the STGWT20IH125DF lead-free?
    Yes, the package is lead-free.
  10. What is the gate-emitter voltage range for the STGWT20IH125DF?
    The gate-emitter voltage range is ±20 V.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1250 V
Current - Collector (Ic) (Max):40 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 15A
Power - Max:259 W
Switching Energy:410µJ (off)
Input Type:Standard
Gate Charge:68 nC
Td (on/off) @ 25°C:-/106ns
Test Condition:600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
0 Remaining View Similar

In Stock

$2.26
408

Please send RFQ , we will respond immediately.

Similar Products

Part Number STGWT20IH125DF STGWT28IH125DF
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1250 V 1250 V
Current - Collector (Ic) (Max) 40 A 60 A
Current - Collector Pulsed (Icm) 80 A 120 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A 2.5V @ 15V, 25A
Power - Max 259 W 375 W
Switching Energy 410µJ (off) 720µJ (off)
Input Type Standard Standard
Gate Charge 68 nC 114 nC
Td (on/off) @ 25°C -/106ns -/128ns
Test Condition 600V, 15A, 10Ohm, 15V 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P TO-3P

Related Product By Categories

FGL40N120ANDTU
FGL40N120ANDTU
onsemi
IGBT NPT 1200V 64A TO264-3
FGA20N120FTDTU
FGA20N120FTDTU
onsemi
IGBT 1200V 40A 298W TO3PN
STGW20V60DF
STGW20V60DF
STMicroelectronics
IGBT 600V 40A 167W TO247
STGF10NB60SD
STGF10NB60SD
STMicroelectronics
IGBT 600V 23A 25W TO220FP
STGB19NC60HDT4
STGB19NC60HDT4
STMicroelectronics
IGBT 600V 40A 130W D2PAK
IKW75N60TFKSA1
IKW75N60TFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
STGW20NC60VD
STGW20NC60VD
STMicroelectronics
IGBT 600V 60A 200W TO247
FGY60T120SQDN
FGY60T120SQDN
onsemi
IGBT 1200V 60A UFS
STGWA40H120DF2
STGWA40H120DF2
STMicroelectronics
TRENCH GATE IGBT TO247 PKG
STGYA75H120DF2
STGYA75H120DF2
STMicroelectronics
TRENCH GATE FIELD-STOP 1200 V, 7
FGL60N100BNTDTU
FGL60N100BNTDTU
onsemi
IGBT 1000V 60A 180W TO264
FGH60N60SFDTU-F085
FGH60N60SFDTU-F085
onsemi
IGBT FIELD STOP 600V 120A TO247

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223