STGD25N40LZAG
  • Share:

STMicroelectronics STGD25N40LZAG

Manufacturer No:
STGD25N40LZAG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
POWER TRANSISTORS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGD25N40LZAG is an application-specific Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is optimized for coil driving in the harsh environment of automotive ignition systems, leveraging the advanced PowerMESH technology. It is designed to meet the stringent requirements of automotive applications, ensuring high reliability and performance.

Key Specifications

ParameterValue
VCE(sat) (Saturation Voltage)Typically 2.5 V at IC = 25 A, VGE = 15 V
VGES (Gate-Emitter Voltage)±20 V
IC (Collector Current)25 A
VCE (Collector-Emitter Voltage)650 V
TJ (Junction Temperature)-40 °C to 150 °C
SCIS Energy320 mJ @ TJ = 25 °C

Key Features

  • AEC-Q101 qualified, ensuring compliance with automotive standards
  • Utilizes advanced PowerMESH technology for improved performance and reliability
  • ESD gate-emitter protection for enhanced robustness
  • 100% tested in SCIS (Short-Circuit Safe Operation) to ensure reliability under harsh conditions

Applications

The STGD25N40LZAG is specifically designed for coil driving in automotive ignition systems. It is suitable for use in harsh environments and meets the stringent requirements of automotive applications, including high reliability and performance under various operating conditions.

Q & A

  1. What is the STGD25N40LZAG used for? The STGD25N40LZAG is used for coil driving in automotive ignition systems.
  2. What technology does the STGD25N40LZAG use? It uses the advanced PowerMESH technology.
  3. Is the STGD25N40LZAG AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  4. What is the maximum collector current of the STGD25N40LZAG? The maximum collector current is 25 A.
  5. What is the maximum collector-emitter voltage of the STGD25N40LZAG? The maximum collector-emitter voltage is 650 V.
  6. What is the SCIS energy of the STGD25N40LZAG at 25 °C? The SCIS energy is 320 mJ at TJ = 25 °C.
  7. Does the STGD25N40LZAG have ESD protection? Yes, it has ESD gate-emitter protection.
  8. What is the operating junction temperature range of the STGD25N40LZAG? The operating junction temperature range is -40 °C to 150 °C.
  9. Is the STGD25N40LZAG 100% tested in SCIS? Yes, it is 100% tested in SCIS.
  10. Where can I find detailed specifications for the STGD25N40LZAG? Detailed specifications can be found on the STMicroelectronics website, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):435 V
Current - Collector (Ic) (Max):25 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:1.25V @ 4V, 6A
Power - Max:125 W
Switching Energy:- 
Input Type:Logic
Gate Charge:26 nC
Td (on/off) @ 25°C:1.1µs/4.6µs
Test Condition:300V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-PAK (TO-252)
0 Remaining View Similar

In Stock

$2.15
319

Please send RFQ , we will respond immediately.

Same Series
STGB25N40LZAG
STGB25N40LZAG
POWER TRANSISTORS

Similar Products

Part Number STGD25N40LZAG STGB25N40LZAG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 435 V 435 V
Current - Collector (Ic) (Max) 25 A 25 A
Current - Collector Pulsed (Icm) 50 A 50 A
Vce(on) (Max) @ Vge, Ic 1.25V @ 4V, 6A 1.25V @ 4V, 6A
Power - Max 125 W 150 W
Switching Energy - -
Input Type Logic Logic
Gate Charge 26 nC 26 nC
Td (on/off) @ 25°C 1.1µs/4.6µs 1.1µs/4.6µs
Test Condition 300V, 10A, 1kOhm, 5V 300V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D-PAK (TO-252) D²PAK (TO-263)

Related Product By Categories

STGD3NB60SDT4
STGD3NB60SDT4
STMicroelectronics
IGBT 600V 6A 48W DPAK
STGD10HF60KD
STGD10HF60KD
STMicroelectronics
IGBT 600V 10A DPAK
STGD5H60DF
STGD5H60DF
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H S
STGP19NC60KD
STGP19NC60KD
STMicroelectronics
IGBT 600V 35A 125W TO220
STGWA40M120DF3
STGWA40M120DF3
STMicroelectronics
IGBT 1200V 80A 468W TO-247-3
FGH40T120SMD
FGH40T120SMD
onsemi
IGBT TRENCH/FS 1200V 80A TO247-3
STGWA40H65DFB
STGWA40H65DFB
STMicroelectronics
IGBT TRENCH 650V 80A TO247
STGWA75M65DF2
STGWA75M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
STGD20N40LZ
STGD20N40LZ
STMicroelectronics
IGBT 390V 25A 125W DPAK
FGAF20S65AQ
FGAF20S65AQ
onsemi
IGBT 650V 20A TO-3PF
FGH60N60SFDTU-F085
FGH60N60SFDTU-F085
onsemi
IGBT FIELD STOP 600V 120A TO247
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN