STGD25N40LZAG
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STMicroelectronics STGD25N40LZAG

Manufacturer No:
STGD25N40LZAG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
POWER TRANSISTORS
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STGD25N40LZAG is an application-specific Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is optimized for coil driving in the harsh environment of automotive ignition systems, leveraging the advanced PowerMESH technology. It is designed to meet the stringent requirements of automotive applications, ensuring high reliability and performance.

Key Specifications

ParameterValue
VCE(sat) (Saturation Voltage)Typically 2.5 V at IC = 25 A, VGE = 15 V
VGES (Gate-Emitter Voltage)±20 V
IC (Collector Current)25 A
VCE (Collector-Emitter Voltage)650 V
TJ (Junction Temperature)-40 °C to 150 °C
SCIS Energy320 mJ @ TJ = 25 °C

Key Features

  • AEC-Q101 qualified, ensuring compliance with automotive standards
  • Utilizes advanced PowerMESH technology for improved performance and reliability
  • ESD gate-emitter protection for enhanced robustness
  • 100% tested in SCIS (Short-Circuit Safe Operation) to ensure reliability under harsh conditions

Applications

The STGD25N40LZAG is specifically designed for coil driving in automotive ignition systems. It is suitable for use in harsh environments and meets the stringent requirements of automotive applications, including high reliability and performance under various operating conditions.

Q & A

  1. What is the STGD25N40LZAG used for? The STGD25N40LZAG is used for coil driving in automotive ignition systems.
  2. What technology does the STGD25N40LZAG use? It uses the advanced PowerMESH technology.
  3. Is the STGD25N40LZAG AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  4. What is the maximum collector current of the STGD25N40LZAG? The maximum collector current is 25 A.
  5. What is the maximum collector-emitter voltage of the STGD25N40LZAG? The maximum collector-emitter voltage is 650 V.
  6. What is the SCIS energy of the STGD25N40LZAG at 25 °C? The SCIS energy is 320 mJ at TJ = 25 °C.
  7. Does the STGD25N40LZAG have ESD protection? Yes, it has ESD gate-emitter protection.
  8. What is the operating junction temperature range of the STGD25N40LZAG? The operating junction temperature range is -40 °C to 150 °C.
  9. Is the STGD25N40LZAG 100% tested in SCIS? Yes, it is 100% tested in SCIS.
  10. Where can I find detailed specifications for the STGD25N40LZAG? Detailed specifications can be found on the STMicroelectronics website, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):435 V
Current - Collector (Ic) (Max):25 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:1.25V @ 4V, 6A
Power - Max:125 W
Switching Energy:- 
Input Type:Logic
Gate Charge:26 nC
Td (on/off) @ 25°C:1.1µs/4.6µs
Test Condition:300V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-PAK (TO-252)
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Same Series
STGB25N40LZAG
STGB25N40LZAG
POWER TRANSISTORS

Similar Products

Part Number STGD25N40LZAG STGB25N40LZAG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 435 V 435 V
Current - Collector (Ic) (Max) 25 A 25 A
Current - Collector Pulsed (Icm) 50 A 50 A
Vce(on) (Max) @ Vge, Ic 1.25V @ 4V, 6A 1.25V @ 4V, 6A
Power - Max 125 W 150 W
Switching Energy - -
Input Type Logic Logic
Gate Charge 26 nC 26 nC
Td (on/off) @ 25°C 1.1µs/4.6µs 1.1µs/4.6µs
Test Condition 300V, 10A, 1kOhm, 5V 300V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D-PAK (TO-252) D²PAK (TO-263)

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