FGL40N120ANDTU
  • Share:

onsemi FGL40N120ANDTU

Manufacturer No:
FGL40N120ANDTU
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT NPT 1200V 64A TO264-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGL40N120ANDTU is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, utilizing NPT (Non-Punch Through) technology. This device is designed to offer low conduction and switching losses, making it suitable for various high-performance applications. The AN series, to which this IGBT belongs, is particularly optimized for use in induction heating, motor control, general purpose inverters, and uninterruptible power supplies (UPS).

Key Specifications

Parameter Symbol Typical Value Unit
Collector to Emitter Voltage V_CES 1200 V
Gate to Emitter Voltage V_GES ±25 V
Collector Current (TC = 25°C) I_C 40 A
Collector Current (TC = 100°C) I_C 40 A
Pulsed Collector Current I_CM 160 A
Collector to Emitter Saturation Voltage V_CE(sat) 2.6 V @ I_C = 40A
Turn-On Delay Time t_d(on) 15 ns
Turn-Off Delay Time t_d(off) 110 ns
Rise Time t_r 20 ns
Fall Time t_f 40 ns
Gate Charge Q_g 220 nC
Package Type TO-264-3

Key Features

  • Low Conduction and Switching Losses: The NPT technology employed in the FGL40N120ANDTU ensures minimal energy losses during operation.
  • High Speed Switching: This IGBT is capable of high-speed switching, making it suitable for applications requiring rapid switching times.
  • Low Saturation Voltage: The device features a low collector to emitter saturation voltage (V_CE(sat)) of 2.6 V at I_C = 40 A, which helps in reducing power losses.
  • High Input Impedance: The high input impedance of the IGBT simplifies the gate drive circuitry and reduces the risk of oscillations.
  • Pb-Free and RoHS Compliant: The FGL40N120ANDTU is lead-free and compliant with RoHS regulations, making it environmentally friendly.

Applications

  • Induction Heating (IH): The IGBT is well-suited for induction heating applications due to its high-speed switching and low losses.
  • Motor Control: It is used in AC and DC motor control systems where high efficiency and reliability are crucial.
  • General Purpose Inverters: The device is applicable in various inverter designs requiring high performance and efficiency.
  • Uninterruptible Power Supplies (UPS): The FGL40N120ANDTU is also used in UPS systems to ensure reliable and efficient power supply.

Q & A

  1. What is the collector to emitter voltage rating of the FGL40N120ANDTU?

    The collector to emitter voltage rating is 1200 V.

  2. What is the maximum collector current at 25°C and 100°C?

    The maximum collector current is 40 A at both 25°C and 100°C.

  3. What is the typical collector to emitter saturation voltage?

    The typical collector to emitter saturation voltage is 2.6 V at I_C = 40 A.

  4. What is the turn-on delay time and turn-off delay time?

    The turn-on delay time is typically 15 ns, and the turn-off delay time is typically 110 ns.

  5. What is the gate charge of the FGL40N120ANDTU?

    The gate charge is typically 220 nC.

  6. Is the FGL40N120ANDTU Pb-free and RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  7. What are the common applications of the FGL40N120ANDTU?

    Common applications include induction heating, motor control, general purpose inverters, and uninterruptible power supplies (UPS).

  8. What package type is the FGL40N120ANDTU available in?

    The device is available in the TO-264-3 package type.

  9. What is the significance of NPT technology in the FGL40N120ANDTU?

    NPT technology reduces conduction and switching losses, enhancing the overall efficiency of the device.

  10. How does the high input impedance of the FGL40N120ANDTU benefit its operation?

    The high input impedance simplifies the gate drive circuitry and reduces the risk of oscillations.

Product Attributes

IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):64 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 40A
Power - Max:500 W
Switching Energy:2.3mJ (on), 1.1mJ (off)
Input Type:Standard
Gate Charge:220 nC
Td (on/off) @ 25°C:15ns/110ns
Test Condition:600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr):112 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Supplier Device Package:TO-264-3
0 Remaining View Similar

In Stock

$9.95
84

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGL40N120ANDTU FGL40N120ANTU
Manufacturer onsemi Fairchild Semiconductor
Product Status Not For New Designs Active
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 64 A 64 A
Current - Collector Pulsed (Icm) 160 A 160 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A 3.2V @ 15V, 40A
Power - Max 500 W 500 W
Switching Energy 2.3mJ (on), 1.1mJ (off) 2.3mJ (on), 1.1mJ (off)
Input Type Standard Standard
Gate Charge 220 nC 220 nC
Td (on/off) @ 25°C 15ns/110ns 15ns/110ns
Test Condition 600V, 40A, 5Ohm, 15V 600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 112 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA
Supplier Device Package TO-264-3 HPM F2

Related Product By Categories

FGL40N120ANDTU
FGL40N120ANDTU
onsemi
IGBT NPT 1200V 64A TO264-3
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
FGH60N60SMD-F085
FGH60N60SMD-F085
onsemi
IGBT 600V 120A 600W TO247
NGD8205ANT4G
NGD8205ANT4G
onsemi
INSULATED GATE BIPOLAR TRANSISTO
SGL160N60UFDTU
SGL160N60UFDTU
onsemi
IGBT 600V 160A 250W TO264
IKW50N60TFKSA1
IKW50N60TFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
STGB6NC60HDT4
STGB6NC60HDT4
STMicroelectronics
IGBT 600V 15A 56W D2PAK
TIG065E8-TL-H
TIG065E8-TL-H
onsemi
IGBT 400V 150A ECH8
FGD3245G2-F085C
FGD3245G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO252
FGB3040G2-F085C
FGB3040G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO263
STGWA60H65DFB
STGWA60H65DFB
STMicroelectronics
IGBT BIPO 650V 60A TO247-3
STGB20NC60VT4
STGB20NC60VT4
STMicroelectronics
IGBT 600V 60A 200W D2PAK

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP