STGF7NB60SL
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STMicroelectronics STGF7NB60SL

Manufacturer No:
STGF7NB60SL
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 600V 15A 25W TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STGF7NB60SL is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This device is designed to offer low on-voltage drop, high current capability, and low gate charge, making it suitable for a variety of power management and switching applications. The STGF7NB60SL features a polysilicon gate voltage-driven design and is packaged in the TO-220FP format, which is widely used in industrial and automotive systems due to its robustness and ease of mounting.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCE) 600 V
Collector Current (IC) 7 A
Gate-Emitter Voltage (VGE) ±20 V
On-Voltage Drop (VCE(sat)) 1.7 V
Gate Charge (Qg) 45 nC
Package Type TO-220FP

Key Features

  • Polysilicon Gate Voltage-Driven Design: Ensures high reliability and stability.
  • Low On-Voltage Drop: Minimizes power losses and improves efficiency.
  • High Current Capability: Supports up to 7 A of collector current.
  • Low Gate Charge: Reduces switching losses and enhances performance.
  • Low Threshold Voltage: Simplifies gate drive requirements.

Applications

  • Industrial Power Supplies: Suitable for high-power switching applications.
  • Automotive Systems: Used in electric vehicle charging, battery management, and other automotive power electronics.
  • Motor Control: Ideal for motor drives and inverters due to its high current and low on-voltage drop characteristics.
  • Renewable Energy Systems: Applied in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the collector-emitter voltage rating of the STGF7NB60SL?

    The collector-emitter voltage rating is 600 V.

  2. What is the maximum collector current of the STGF7NB60SL?

    The maximum collector current is 7 A.

  3. What is the package type of the STGF7NB60SL?

    The package type is TO-220FP.

  4. What are the key features of the STGF7NB60SL?

    The key features include low on-voltage drop, high current capability, low gate charge, and low threshold voltage.

  5. In which applications is the STGF7NB60SL commonly used?

    It is commonly used in industrial power supplies, automotive systems, motor control, and renewable energy systems.

  6. What is the gate-emitter voltage range for the STGF7NB60SL?

    The gate-emitter voltage range is ±20 V.

  7. How does the polysilicon gate voltage-driven design benefit the STGF7NB60SL?

    The polysilicon gate voltage-driven design ensures high reliability and stability.

  8. What is the typical on-voltage drop (VCE(sat)) of the STGF7NB60SL?

    The typical on-voltage drop is 1.7 V.

  9. What is the gate charge (Qg) of the STGF7NB60SL?

    The gate charge is 45 nC.

  10. Is the STGF7NB60SL RoHS compliant?

    Yes, the STGF7NB60SL is RoHS compliant.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):15 A
Current - Collector Pulsed (Icm):20 A
Vce(on) (Max) @ Vge, Ic:1.6V @ 4.5V, 7A
Power - Max:25 W
Switching Energy:4.1mJ (off)
Input Type:Standard
Gate Charge:16 nC
Td (on/off) @ 25°C:1.1µs/5.2µs
Test Condition:480V, 7A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220FP
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