Overview
The NGTB45N60S1WG is an Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. This device features a robust and cost-effective Trench construction, making it suitable for demanding switching applications. It is particularly optimized for high-speed switching and includes a soft and fast co-packaged free-wheeling diode. The IGBT is well-suited for applications such as welding, where low on-state voltage and minimal switching loss are critical.
Key Specifications
| Parameter | Value |
|---|---|
| Current (Ic) | 45 A @ 25°C |
| Voltage (Vce) | 600 V |
| IGBT Type | Trench |
| Gate Charge (Qg) | 125 nC |
| Maximum Gate-Emitter Voltage (Vge) | 20 V |
| Collector-Emitter Saturation Voltage (VCEsat) | 2 V @ 25°C |
| Maximum Junction Temperature (Tj) | 175°C |
| Package | TO-247-3 |
| Maximum Power Dissipation (Pc) | 150 W |
| Switching Energy (Eon/Eoff) | 1.25 mJ (on), 0.53 mJ (off) |
| Rise Time (tr) | 33 ns (typ) |
| Reverse Recovery Time (trr) | 70 ns |
| Short Circuit Withstand | 5 µs |
| Co-Packaged Diode | Yes |
Key Features
- Robust and cost-effective Trench construction
- Optimized for high-speed switching
- Low on-state voltage and minimal switching loss
- Soft and fast co-packaged free-wheeling diode with low forward voltage
- Maximum junction temperature of 175°C
- Short circuit withstand capability of 5 µs
Applications
The NGTB45N60S1WG IGBT is particularly well-suited for welding applications due to its low on-state voltage and minimal switching loss. It is also suitable for other demanding switching applications where high-speed switching and reliability are critical.
Q & A
- What is the maximum collector current of the NGTB45N60S1WG IGBT?
The maximum collector current is 45 A @ 25°C. - What is the maximum collector-emitter voltage of the NGTB45N60S1WG IGBT?
The maximum collector-emitter voltage is 600 V. - What type of IGBT is the NGTB45N60S1WG?
The NGTB45N60S1WG is a Trench type IGBT. - Does the NGTB45N60S1WG come with a co-packaged diode?
Yes, it includes a soft and fast co-packaged free-wheeling diode. - What is the maximum junction temperature of the NGTB45N60S1WG?
The maximum junction temperature is 175°C. - What is the typical rise time of the NGTB45N60S1WG?
The typical rise time is 33 ns. - What is the reverse recovery time of the NGTB45N60S1WG?
The reverse recovery time is 70 ns. - What is the short circuit withstand capability of the NGTB45N60S1WG?
The short circuit withstand capability is 5 µs. - What is the package type of the NGTB45N60S1WG?
The package type is TO-247-3. - What are the typical switching energies for the NGTB45N60S1WG?
The typical switching energies are 1.25 mJ (on) and 0.53 mJ (off).
