Overview
The FGHL75T65MQDTL4 is a Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device is part of the 4th generation mid-speed IGBT technology and is designed for high-performance applications. It features a maximum collector-emitter voltage (VCES) of 650 V and a maximum collector current (IC) of 75 A at 25°C. The FGHL75T65MQDTL4 is known for its low saturation voltage, high current capability, and smooth switching characteristics, making it suitable for various power conversion applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector to Emitter Voltage | VCES | 650 | V |
| Gate to Emitter Voltage (Transient) | VGES | ±20 (±30 transient) | V |
| Collector Current @ TC = 25°C | IC | 80 | A |
| Collector Current @ TC = 100°C | IC | 75 | A |
| Pulsed Collector Current | ILM/ICM | 300 | A |
| Diode Forward Current @ TC = 25°C | IF | 80 | A |
| Diode Forward Current @ TC = 100°C | IF | 75 | A |
| Maximum Power Dissipation @ TC = 25°C | PD | 375 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | −55 to +175 | °C |
| Maximum Lead Temperature for Soldering | TL | 260 | °C |
| Thermal Resistance Junction-to-case for IGBT | RJC | 0.40 | °C/W |
| Thermal Resistance Junction-to-case for Diode | RJC | 0.60 | °C/W |
| Thermal Resistance Junction-to-ambient | RJA | 40 | °C/W |
| Collector-emitter Saturation Voltage @ IC = 75 A | VCE(sat) | 1.45 | V |
Key Features
- Field Stop Trench IGBT Technology: 4th generation mid-speed IGBT technology for high performance.
- High Current Capability: Maximum collector current of 75 A at 25°C.
- Low Saturation Voltage: VCE(sat) of 1.45 V at IC = 75 A.
- Positive Temperature Coefficient: Easy parallel operation due to positive temperature coefficient.
- Smooth and Optimized Switching: Ensures efficient and reliable switching operations.
- Tight Parameter Distribution: Consistent performance across devices.
- RoHS Compliant: Meets environmental regulations.
Applications
- Solar Inverter: Suitable for solar power conversion systems.
- UPS (Uninterruptible Power Supply) and ESS (Energy Storage Systems): Used in backup power and energy storage applications.
- PFC (Power Factor Correction) and Converters: Ideal for power factor correction and various converter applications.
Q & A
- What is the maximum collector-emitter voltage of the FGHL75T65MQDTL4?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the maximum collector current at 25°C?
The maximum collector current (IC) at 25°C is 80 A.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage (VCE(sat)) is 1.45 V at IC = 75 A.
- What is the thermal resistance junction-to-case for the IGBT?
The thermal resistance junction-to-case (RJC) for the IGBT is 0.40 °C/W.
- Is the FGHL75T65MQDTL4 RoHS compliant?
Yes, the FGHL75T65MQDTL4 is RoHS compliant.
- What are the typical applications of the FGHL75T65MQDTL4?
Typical applications include solar inverters, UPS, ESS, PFC, and converters.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 260 °C.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175 °C.
- What is the pulsed collector current rating?
The pulsed collector current (ILM/ICM) is 300 A.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at 25°C is 375 W.
