Overview
The STGW15H120DF2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the H series of IGBTs, which are designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of high-switching frequency converters. The STGW15H120DF2 features an advanced proprietary trench gate field-stop structure, ensuring high speed switching and minimized tail current.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector-emitter voltage (VGE = 0 V) | 1200 | V |
| IC | Continuous collector current at TC = 25 °C | 30 | A |
| IC | Continuous collector current at TC = 100 °C | 15 | A |
| ICP(1) | Pulsed collector current | 60 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| VGE | Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) | ±30 | V |
| PTOT | Total power dissipation at TC = 25 °C | 259 | W |
| TSTG | Storage temperature range | -55 to 150 | °C |
| TJ | Operating junction temperature range | -55 to 175 | °C |
| RthJC | Thermal resistance, junction-to-case IGBT | 0.58 | °C/W |
| RthJA | Thermal resistance, junction-to-ambient | 50 | °C/W |
| VCE(sat) | Collector-emitter saturation voltage | 2.1 V @ IC = 15 A | V |
| VF | Forward on-voltage | 3.5 V @ IF = 25 A | V |
Key Features
- Advanced proprietary trench gate field-stop structure
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V @ IC = 15 A
- 5 μs minimum short circuit withstand time at TJ = 150 °C
- Safe paralleling due to slightly positive VCE(sat) temperature coefficient and tight parameter distribution
- Low thermal resistance
- Very fast recovery antiparallel diode
Applications
- Photovoltaic inverters
- Uninterruptible power supply (UPS)
- Welding equipment
- Power factor correction (PFC)
- High frequency converters
Q & A
- What is the maximum collector-emitter voltage of the STGW15H120DF2?
The maximum collector-emitter voltage (VCES) is 1200 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 30 A at TC = 25 °C and 15 A at TC = 100 °C.
- What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case (RthJC) for the IGBT is 0.58 °C/W.
- What is the collector-emitter saturation voltage at IC = 15 A?
The collector-emitter saturation voltage (VCE(sat)) is 2.1 V at IC = 15 A.
- What is the short circuit withstand time at TJ = 150 °C?
The minimum short circuit withstand time at TJ = 150 °C is 5 μs.
- Is the STGW15H120DF2 suitable for paralleling?
- What are the typical applications of the STGW15H120DF2?
The typical applications include photovoltaic inverters, uninterruptible power supply (UPS), welding equipment, power factor correction (PFC), and high frequency converters.
- What is the maximum junction temperature of the STGW15H120DF2?
The maximum junction temperature (TJ) is 175 °C.
- What package types are available for the STGW15H120DF2?
The device is available in TO-247 and TO-247 long leads packages.
- What is the forward on-voltage of the STGW15H120DF2 at IF = 25 A?
The forward on-voltage (VF) is 3.5 V at IF = 25 A.
- Does the STGW15H120DF2 have a fast recovery antiparallel diode?
