Overview
The NGTB50N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Field Stop II Trench construction. This device is designed to provide superior performance in demanding switching applications, offering low on-state voltage and minimal switching loss. It is particularly well-suited for applications such as solar inverters and uninterruptible power supplies (UPS). The IGBT includes a soft and fast co-packaged free-wheeling diode with a low forward voltage, enhancing its overall efficiency and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter Voltage | VCES | 1200 | V |
| Collector Current @ TC = 25°C | IC | 100 | A |
| Collector Current @ TC = 100°C | IC | 50 | A |
| Pulsed Collector Current, Tpulse Limited by TJmax | ICM | 200 | A |
| Diode Forward Current @ TC = 25°C | IF | 100 | A |
| Diode Forward Current @ TC = 100°C | IF | 50 | A |
| Diode Pulsed Current, Tpulse Limited by TJmax | IFM | 200 | A |
| Gate-emitter Voltage Transient | VGE | ±20 (±30 for Tpulse = 5 μs, D < 0.10) | V |
| Power Dissipation @ TC = 25°C | PD | 535 | W |
| Power Dissipation @ TC = 100°C | PD | 267 | W |
| Short Circuit Withstand Time | TSC | 10 μs | |
| Operating Junction Temperature Range | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
| Lead Temperature for Soldering | TSLD | 260 | °C |
| Thermal Resistance Junction-to-Case for IGBT | RJC | 0.28 | °C/W |
| Thermal Resistance Junction-to-Case for Diode | RJC | 0.5 | °C/W |
| Thermal Resistance Junction-to-Ambient | RJA | 40 | °C/W |
| Collector-emitter Saturation Voltage | VCEsat | 2.20 | V |
| Gate-emitter Threshold Voltage | VGE(th) | 4.5 - 6.5 | V |
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature (TJmax) of 175°C
- Soft and Fast Co-packaged Free-wheeling Diode with Low Forward Voltage
- Optimized for High Speed Switching
- 10 μs Short Circuit Capability
- Pb-Free Device
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding
Q & A
- What is the maximum collector-emitter voltage of the NGTB50N120FL2WG IGBT? The maximum collector-emitter voltage is 1200 V.
- What is the maximum collector current at 25°C and 100°C? The maximum collector current is 100 A at 25°C and 50 A at 100°C.
- What is the short circuit withstand time of the IGBT? The short circuit withstand time is 10 μs.
- What is the operating junction temperature range of the device? The operating junction temperature range is -55 to +175°C.
- Does the NGTB50N120FL2WG include a free-wheeling diode? Yes, it includes a soft and fast co-packaged free-wheeling diode with a low forward voltage.
- What are the typical applications of the NGTB50N120FL2WG IGBT? Typical applications include solar inverters, uninterruptible power supplies (UPS), and welding.
- What is the thermal resistance junction-to-case for the IGBT? The thermal resistance junction-to-case for the IGBT is 0.28 °C/W.
- Is the NGTB50N120FL2WG a Pb-Free device? Yes, it is a Pb-Free device.
- What is the maximum power dissipation at 25°C and 100°C? The maximum power dissipation is 535 W at 25°C and 267 W at 100°C.
- What is the gate-emitter threshold voltage range? The gate-emitter threshold voltage range is 4.5 to 6.5 V.
