Overview
The FGH80N60FD2TU is a 600V, 80A Field Stop IGBT (Insulated Gate Bipolar Transistor) produced by onsemi (formerly Fairchild Semiconductor). Although this product is currently obsolete and no longer in production, it remains a significant component in the realm of power electronics due to its high performance and reliability. The FGH80N60FD2TU is designed for high-power applications requiring efficient switching and minimal losses.
Key Specifications
| Parameter | Description | Ratings | Unit |
|---|---|---|---|
| VCES | Collector to Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current at TC = 25°C | 80 | A |
| VCE(sat) | Collector-Emitter Saturation Voltage | 1.8 | V |
Key Features
- High Voltage and Current Ratings: The FGH80N60FD2TU offers a collector-emitter voltage rating of 600V and a collector current of 80A, making it suitable for high-power applications.
- Field Stop Technology: This IGBT utilizes field stop technology, which enhances the device's performance by reducing losses and improving switching characteristics.
- Low Saturation Voltage: The device has a low collector-emitter saturation voltage of 1.8V, which helps in minimizing conduction losses.
- Robust Gate-Emitter Voltage: The gate-emitter voltage is rated at ±20V, ensuring reliable operation under various gate drive conditions.
Applications
The FGH80N60FD2TU is designed for use in high-power electronic systems, including:
- Power Supplies and Inverters: Suitable for high-efficiency power supplies, DC-DC converters, and inverters due to its high voltage and current handling capabilities.
- Motor Drives: Used in motor drive applications where high power and efficient switching are required.
- Industrial Power Systems: Applicable in various industrial power systems that demand reliable and efficient power management.
Q & A
- What is the maximum collector-emitter voltage of the FGH80N60FD2TU?
The maximum collector-emitter voltage (VCES) is 600V.
- What is the collector current rating of the FGH80N60FD2TU at 25°C?
The collector current (IC) rating at 25°C is 80A.
- What is the gate-emitter voltage rating of the FGH80N60FD2TU?
The gate-emitter voltage (VGES) is rated at ±20V.
- What is the collector-emitter saturation voltage of the FGH80N60FD2TU?
The collector-emitter saturation voltage (VCE(sat)) is 1.8V.
- Is the FGH80N60FD2TU still in production?
No, the FGH80N60FD2TU is obsolete and no longer in production.
- What technology does the FGH80N60FD2TU use?
The FGH80N60FD2TU uses field stop technology.
- What are some common applications of the FGH80N60FD2TU?
Common applications include power supplies, inverters, motor drives, and industrial power systems.
- Where can I find detailed specifications for the FGH80N60FD2TU?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
- What are the benefits of using field stop IGBTs like the FGH80N60FD2TU?
Field stop IGBTs offer improved switching characteristics and reduced losses, making them efficient for high-power applications).
- Can I still find substitutes for the FGH80N60FD2TU?
