STGD3NB60SDT4
  • Share:

STMicroelectronics STGD3NB60SDT4

Manufacturer No:
STGD3NB60SDT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 600V 6A 48W DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGD3NB60SDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is designed for high-power applications, offering a combination of low losses and high reliability. It features an advanced proprietary trench gate field stop structure, which enhances its switching performance and thermal characteristics.

Key Specifications

ParameterValue
Voltage Rating (VCE)600 V
Current Rating (IC)6 A
Package TypeDPAK (Surface Mount)
Power Dissipation (PD)48 W
Thermal Resistance (Rth(j-c))Low thermal resistance

Key Features

  • Advanced proprietary trench gate field stop structure for improved switching performance.
  • Low thermal resistance, enhancing heat dissipation and reliability.
  • High voltage rating of 600 V and current rating of 6 A, suitable for high-power applications.
  • Surface mount DPAK package for easy integration into various designs.

Applications

The STGD3NB60SDT4 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the STGD3NB60SDT4?
    The voltage rating of the STGD3NB60SDT4 is 600 V.
  2. What is the current rating of the STGD3NB60SDT4?
    The current rating of the STGD3NB60SDT4 is 6 A.
  3. What package type does the STGD3NB60SDT4 come in?
    The STGD3NB60SDT4 comes in a DPAK (Surface Mount) package.
  4. What is the power dissipation of the STGD3NB60SDT4?
    The power dissipation of the STGD3NB60SDT4 is 48 W.
  5. What is the thermal resistance of the STGD3NB60SDT4?
    The STGD3NB60SDT4 has low thermal resistance.
  6. What is the structure used in the STGD3NB60SDT4?
    The STGD3NB60SDT4 uses an advanced proprietary trench gate field stop structure.
  7. Where can I find the datasheet for the STGD3NB60SDT4?
    You can find the datasheet for the STGD3NB60SDT4 on the STMicroelectronics website or through distributors like Mouser, Digi-Key, and others.
  8. What are some common applications for the STGD3NB60SDT4?
    The STGD3NB60SDT4 is commonly used in power supplies, motor drives, industrial automation, and renewable energy systems.
  9. How does the STGD3NB60SDT4 enhance switching performance?
    The STGD3NB60SDT4 enhances switching performance through its advanced proprietary trench gate field stop structure.
  10. Is the STGD3NB60SDT4 suitable for high-power applications?
    Yes, the STGD3NB60SDT4 is designed for high-power applications due to its high voltage and current ratings.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):6 A
Current - Collector Pulsed (Icm):25 A
Vce(on) (Max) @ Vge, Ic:1.5V @ 15V, 3A
Power - Max:48 W
Switching Energy:1.15mJ (off)
Input Type:Standard
Gate Charge:18 nC
Td (on/off) @ 25°C:125µs/-
Test Condition:480V, 3A, 1kOhm, 15V
Reverse Recovery Time (trr):1.7 µs
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$1.10
59

Please send RFQ , we will respond immediately.

Same Series
STGD3NB60SD-1
STGD3NB60SD-1
IGBT 600V 6A 48W DPAK

Similar Products

Part Number STGD3NB60SDT4 STGB3NB60SDT4 STGD3NB60HDT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 6 A 6 A 10 A
Current - Collector Pulsed (Icm) 25 A 25 A 24 A
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 3A 1.5V @ 15V, 3A 2.8V @ 15V, 3A
Power - Max 48 W 70 W 50 W
Switching Energy 1.15mJ (off) 1.15mJ (off) 33µJ (off)
Input Type Standard Standard Standard
Gate Charge 18 nC 18 nC 21 nC
Td (on/off) @ 25°C 125µs/- 125ns/3.4µs 5ns/53ns
Test Condition 480V, 3A, 1kOhm, 15V 480V, 3A, 1kOhm, 15V 480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr) 1.7 µs 1.7 µs 95 ns
Operating Temperature 175°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK D2PAK DPAK

Related Product By Categories

FGH40T65SHD-F155
FGH40T65SHD-F155
Fairchild Semiconductor
IGBT, 80A, 650V, N-CHANNEL, TO-2
HGTD1N120BNS9A
HGTD1N120BNS9A
onsemi
IGBT 1200V 5.3A 60W TO252AA
FGH60N60SMD
FGH60N60SMD
onsemi
IGBT FIELD STOP 600V 120A TO247
STGW20H60DF
STGW20H60DF
STMicroelectronics
IGBT 600V 40A 167W TO247
STGW40H65DFB
STGW40H65DFB
STMicroelectronics
IGBT 650V 80A 283W TO-247
STGB40H65FB
STGB40H65FB
STMicroelectronics
IGBT BIPO 650V 40A D2PAK
STGW25M120DF3
STGW25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W
STGYA120M65DF2
STGYA120M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
NGTB50N65FL2WG
NGTB50N65FL2WG
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
STGWT80H65DFB
STGWT80H65DFB
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L
AFGY160T65SPD-B4
AFGY160T65SPD-B4
onsemi
IGBT - 650V, 160A FIELD STOP TRE
ISL9V5036S3ST_SB82170
ISL9V5036S3ST_SB82170
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24