STGD3NB60SDT4
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STMicroelectronics STGD3NB60SDT4

Manufacturer No:
STGD3NB60SDT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 600V 6A 48W DPAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STGD3NB60SDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is designed for high-power applications, offering a combination of low losses and high reliability. It features an advanced proprietary trench gate field stop structure, which enhances its switching performance and thermal characteristics.

Key Specifications

ParameterValue
Voltage Rating (VCE)600 V
Current Rating (IC)6 A
Package TypeDPAK (Surface Mount)
Power Dissipation (PD)48 W
Thermal Resistance (Rth(j-c))Low thermal resistance

Key Features

  • Advanced proprietary trench gate field stop structure for improved switching performance.
  • Low thermal resistance, enhancing heat dissipation and reliability.
  • High voltage rating of 600 V and current rating of 6 A, suitable for high-power applications.
  • Surface mount DPAK package for easy integration into various designs.

Applications

The STGD3NB60SDT4 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the STGD3NB60SDT4?
    The voltage rating of the STGD3NB60SDT4 is 600 V.
  2. What is the current rating of the STGD3NB60SDT4?
    The current rating of the STGD3NB60SDT4 is 6 A.
  3. What package type does the STGD3NB60SDT4 come in?
    The STGD3NB60SDT4 comes in a DPAK (Surface Mount) package.
  4. What is the power dissipation of the STGD3NB60SDT4?
    The power dissipation of the STGD3NB60SDT4 is 48 W.
  5. What is the thermal resistance of the STGD3NB60SDT4?
    The STGD3NB60SDT4 has low thermal resistance.
  6. What is the structure used in the STGD3NB60SDT4?
    The STGD3NB60SDT4 uses an advanced proprietary trench gate field stop structure.
  7. Where can I find the datasheet for the STGD3NB60SDT4?
    You can find the datasheet for the STGD3NB60SDT4 on the STMicroelectronics website or through distributors like Mouser, Digi-Key, and others.
  8. What are some common applications for the STGD3NB60SDT4?
    The STGD3NB60SDT4 is commonly used in power supplies, motor drives, industrial automation, and renewable energy systems.
  9. How does the STGD3NB60SDT4 enhance switching performance?
    The STGD3NB60SDT4 enhances switching performance through its advanced proprietary trench gate field stop structure.
  10. Is the STGD3NB60SDT4 suitable for high-power applications?
    Yes, the STGD3NB60SDT4 is designed for high-power applications due to its high voltage and current ratings.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):6 A
Current - Collector Pulsed (Icm):25 A
Vce(on) (Max) @ Vge, Ic:1.5V @ 15V, 3A
Power - Max:48 W
Switching Energy:1.15mJ (off)
Input Type:Standard
Gate Charge:18 nC
Td (on/off) @ 25°C:125µs/-
Test Condition:480V, 3A, 1kOhm, 15V
Reverse Recovery Time (trr):1.7 µs
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Same Series
STGD3NB60SD-1
STGD3NB60SD-1
IGBT 600V 6A 48W DPAK

Similar Products

Part Number STGD3NB60SDT4 STGB3NB60SDT4 STGD3NB60HDT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 6 A 6 A 10 A
Current - Collector Pulsed (Icm) 25 A 25 A 24 A
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 3A 1.5V @ 15V, 3A 2.8V @ 15V, 3A
Power - Max 48 W 70 W 50 W
Switching Energy 1.15mJ (off) 1.15mJ (off) 33µJ (off)
Input Type Standard Standard Standard
Gate Charge 18 nC 18 nC 21 nC
Td (on/off) @ 25°C 125µs/- 125ns/3.4µs 5ns/53ns
Test Condition 480V, 3A, 1kOhm, 15V 480V, 3A, 1kOhm, 15V 480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr) 1.7 µs 1.7 µs 95 ns
Operating Temperature 175°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK D2PAK DPAK

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