STGW30NC120HD
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STMicroelectronics STGW30NC120HD

Manufacturer No:
STGW30NC120HD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 1200V 60A 220W TO247
Delivery:
Payment:
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Product Introduction

Overview

The STGW30NC120HD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component is designed to meet the demands of high-power applications, offering a balance of low losses, high current capability, and robust thermal performance. It is particularly suited for soft switching applications due to its low on-losses and high input impedance.

Key Specifications

ParameterValue
Forward Current30 A
Forward Voltage (Vce(sat))1.9 V
Maximum Collector Current30 A
Maximum Operating Temperature150 °C
Voltage Rating (Vce)1200 V
Power Dissipation220 W
Package TypeTO-247-3

Key Features

  • Ideal for soft switching applications due to low on-losses and high input impedance.
  • High current capability of up to 30 A.
  • Low on-voltage drop (Vce(sat)) of 1.9 V.
  • Low gate charge for efficient switching.
  • High thermal performance with a maximum operating temperature of 150 °C.

Applications

The STGW30NC120HD IGBT is suitable for a variety of high-power applications, including:

  • Power supplies and converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Industrial automation and control systems.

Q & A

  1. What is the maximum forward current of the STGW30NC120HD?
    The maximum forward current is 30 A.
  2. What is the voltage rating of the STGW30NC120HD?
    The voltage rating is 1200 V.
  3. What is the maximum operating temperature of the STGW30NC120HD?
    The maximum operating temperature is 150 °C.
  4. What package type does the STGW30NC120HD come in?
    The package type is TO-247-3.
  5. What are the typical applications for the STGW30NC120HD?
    Typical applications include power supplies, motor drives, renewable energy systems, and industrial automation.
  6. What is the power dissipation of the STGW30NC120HD?
    The power dissipation is 220 W.
  7. Why is the STGW30NC120HD ideal for soft switching applications?
    It is ideal due to its low on-losses and high input impedance.
  8. What is the forward voltage drop (Vce(sat)) of the STGW30NC120HD?
    The forward voltage drop (Vce(sat)) is 1.9 V.
  9. Is the STGW30NC120HD suitable for high-power applications?
    Yes, it is designed for high-power applications.
  10. Where can I find detailed specifications for the STGW30NC120HD?
    Detailed specifications can be found on the STMicroelectronics official website, Digi-Key, and other electronic component distributors.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:2.75V @ 15V, 20A
Power - Max:220 W
Switching Energy:1.66mJ (on), 4.44mJ (off)
Input Type:Standard
Gate Charge:110 nC
Td (on/off) @ 25°C:29ns/275ns
Test Condition:960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):152 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number STGW30NC120HD STGW35NC120HD
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 60 A 60 A
Current - Collector Pulsed (Icm) - 135 A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A 2.75V @ 15V, 20A
Power - Max 220 W 235 W
Switching Energy 1.66mJ (on), 4.44mJ (off) 1.66mJ (on), 4.44mJ (off)
Input Type Standard Standard
Gate Charge 110 nC 110 nC
Td (on/off) @ 25°C 29ns/275ns 29ns/275ns
Test Condition 960V, 20A, 10Ohm, 15V 960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 152 ns 152 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

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