Overview
The FGH60N60SFDTU-F085 is a Field Stop Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. This device is designed using novel Field Stop IGBT technology, which offers optimal performance for applications requiring low conduction and switching losses. It is particularly suited for automotive chargers, inverters, and other high-voltage auxiliary systems.
Key Specifications
| Parameter | Symbol | Typical Value | Maximum Value | Unit |
|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | - | 600 | V |
| Gate to Emitter Voltage | VGES | - | ±20 | V |
| Transient Gate to Emitter Voltage | - | - | ±30 | V |
| Collector Current at 25°C | IC | - | 120 | A |
| Collector Current at 100°C | IC | - | 60 | A |
| Pulsed Collector Current at 25°C | ICM | - | 180 | A |
| Maximum Power Dissipation at 25°C | PD | - | 378 | W |
| Operating Junction Temperature | TJ | -55 to +150 | - | °C |
| Collector to Emitter Saturation Voltage | VCE(sat) | 2.2 | 2.9 | V |
| Gate to Emitter Threshold Voltage | VGE(th) | 4.0 | 6.6 | V |
| Rise Time | tr | - | 54 | ns |
| Output Capacitance | Coes | - | 310 | pF |
| Total Gate Charge | Qg | - | 188 | nC |
Key Features
- High Current Capability: The IGBT can handle up to 120 A at 25°C and 60 A at 100°C.
- Low Saturation Voltage: VCE(sat) of 2.2 V at IC = 60 A, ensuring low conduction losses.
- High Input Impedance: Reduces the gate drive current requirements.
- Fast Switching: Fast turn-on and turn-off times, with a rise time of 54 ns and fall time of 18 ns.
- AEC-Q101 Qualified: Meets automotive requirements for reliability and performance.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.
Applications
- Automotive Chargers: Ideal for high-power charging systems in electric and hybrid vehicles.
- Inverters: Suitable for power conversion in solar inverters, UPS, and other inverter applications.
- High Voltage Auxiliaries: Used in various high-voltage auxiliary systems in automotive and industrial applications.
- PFC and UPS: Applicable in power factor correction (PFC) circuits and uninterruptible power supplies (UPS).
Q & A
- What is the maximum collector to emitter voltage of the FGH60N60SFDTU-F085 IGBT?
The maximum collector to emitter voltage (VCES) is 600 V.
- What is the typical collector to emitter saturation voltage at 60 A?
The typical collector to emitter saturation voltage (VCE(sat)) is 2.2 V at IC = 60 A.
- What are the operating junction temperature limits for this IGBT?
The operating junction temperature (TJ) range is from -55°C to +150°C.
- Is the FGH60N60SFDTU-F085 IGBT qualified for automotive applications?
Yes, it is qualified to meet the automotive requirements of AEC-Q101.
- What is the maximum power dissipation at 25°C for this device?
The maximum power dissipation (PD) at 25°C is 378 W.
- What is the typical rise time for the FGH60N60SFDTU-F085 IGBT?
The typical rise time (tr) is 54 ns.
- What are the key applications for the FGH60N60SFDTU-F085 IGBT?
Key applications include automotive chargers, inverters, high voltage auxiliaries, PFC, and UPS.
- Is the FGH60N60SFDTU-F085 IGBT Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What is the package type for the FGH60N60SFDTU-F085 IGBT?
The package type is TO-247.
- What is the maximum collector current at 100°C for this IGBT?
The maximum collector current (IC) at 100°C is 60 A.
