Overview
The ISL9V5045S3ST-F085C is a next-generation ignition IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device is designed for high-performance applications, particularly in automotive ignition systems. It features outstanding Self-Clamped Inductive Switching (SCIS) energy capability and is packaged in the industry-standard D2PAK (TO-263) plastic package. The IGBT is AEC-Q101 qualified and RoHS compliant, ensuring reliability and environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector to Emitter Breakdown Voltage | BVCER | 480 | V |
| Emitter to Collector Voltage - Reverse Battery Condition | BVECS | 24 | V |
| Self-Clamped Inductive Switching Energy at TJ = 25°C | ESCIS25 | 500 | mJ |
| Self-Clamped Inductive Switching Energy at TJ = 150°C | ESCIS150 | 315 | mJ |
| Collector Current Continuous at VGE = 4.0 V, TC = 25°C | IC25 | 51 | A |
| Collector Current Continuous at VGE = 4.0 V, TC = 110°C | IC110 | 43 | A |
| Gate to Emitter Voltage Continuous | VGEM | ±10 | V |
| Power Dissipation Total at TC = 25°C | PD | 300 | W |
| Operating Junction and Storage Temperature | TJ, TSTG | −40 to 175 | °C |
| Lead Temperature for Soldering Purposes | TL | 300 | °C |
| Reflow Soldering Temperature | TPKG | 260 | °C |
| HBM Electrostatic Discharge Voltage | ESD | 4 kV | |
| CDM Electrostatic Discharge Voltage | ESD | 2 kV |
Key Features
- SCIS Energy: 500 mJ at TJ = 25°C and 315 mJ at TJ = 150°C.
- Logic Level Gate Drive: Compatible with logic level gate drive signals, making it easier to integrate into various control systems.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive industry standards for reliability and quality.
- Rohs Compliant: Lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
- Internal Diodes: Built-in Zener diodes provide voltage clamping without the need for external components.
- High Current Capability: Continuous collector current of up to 51 A at 25°C and 43 A at 110°C.
- High Voltage Rating: Collector to emitter breakdown voltage of 480 V).
Applications
- Automotive Ignition Coil Driver Circuits: Designed for use in automotive ignition systems, including coil-on-plug applications).
- High Current Ignition Systems: Suitable for high current ignition systems requiring robust and reliable switching performance).
Q & A
- What is the maximum collector to emitter breakdown voltage of the ISL9V5045S3ST-F085C?
The maximum collector to emitter breakdown voltage is 480 V).
- What is the SCIS energy capability of the ISL9V5045S3ST-F085C at 25°C and 150°C?
The SCIS energy is 500 mJ at 25°C and 315 mJ at 150°C).
- Is the ISL9V5045S3ST-F085C AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable).
- What is the maximum continuous collector current at 25°C and 110°C?
The maximum continuous collector current is 51 A at 25°C and 43 A at 110°C).
- Does the ISL9V5045S3ST-F085C have built-in diodes?
Yes, it has built-in Zener diodes for voltage clamping).
- What is the operating junction and storage temperature range of the ISL9V5045S3ST-F085C?
The operating junction and storage temperature range is −40 to 175°C).
- Is the ISL9V5045S3ST-F085C RoHS compliant?
Yes, the device is RoHS compliant and lead-free).
- What is the package type of the ISL9V5045S3ST-F085C?
The device is packaged in the D2PAK (TO-263) plastic package).
- What are the typical applications of the ISL9V5045S3ST-F085C?
Typical applications include automotive ignition coil driver circuits and high current ignition systems).
- What is the maximum power dissipation of the ISL9V5045S3ST-F085C at 25°C?
The maximum power dissipation is 300 W at 25°C).
