Overview
The STGWT30H60DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the HB series, which is designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of frequency converters. This IGBT utilizes an advanced proprietary trench gate field-stop structure, ensuring high-speed switching capabilities and minimized tail current. The device is packaged in a TO-3P format and is suitable for industrial applications due to its robust characteristics and safe paralleling features.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum Junction Temperature (TJ) | 175 °C |
| Collector-Emitter Voltage (VCE) | 600 V |
| Collector Current (IC) | 30 A (typ.) |
| Saturation Voltage (VCE(sat)) | 1.55 V (typ.) @ IC = 30 A |
| Package Type | TO-3P |
| Number of Pins | 3 |
| Operating Temperature Range | -40 °C to 175 °C |
Key Features
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameter distribution for safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
The STGWT30H60DFB IGBT is designed for use in various high-power applications, including but not limited to:
- Frequency converters
- Motor drives
- Power supplies
- Uninterruptible Power Supplies (UPS)
- Renewable energy systems
Q & A
- What is the maximum junction temperature of the STGWT30H60DFB?
The maximum junction temperature is 175 °C. - What is the collector-emitter voltage rating of the STGWT30H60DFB?
The collector-emitter voltage rating is 600 V. - What is the typical collector current of the STGWT30H60DFB?
The typical collector current is 30 A. - What is the saturation voltage of the STGWT30H60DFB at 30 A?
The saturation voltage is 1.55 V (typ.) at IC = 30 A. - What package type is the STGWT30H60DFB available in?
The STGWT30H60DFB is available in a TO-3P package. - Does the STGWT30H60DFB have safe paralleling features?
Yes, it has tight parameter distribution and a positive VCE(sat) temperature coefficient for safe paralleling. - What are the key features of the STGWT30H60DFB?
The key features include high-speed switching, minimized tail current, low saturation voltage, and a very fast soft recovery antiparallel diode. - In what types of applications is the STGWT30H60DFB typically used?
The STGWT30H60DFB is typically used in frequency converters, motor drives, power supplies, UPS, and renewable energy systems. - Is the STGWT30H60DFB RoHS compliant?
Yes, the STGWT30H60DFB is RoHS compliant with an Ecopack2 grade. - Where can I find EDA symbols, footprints, and 3D models for the STGWT30H60DFB?
You can find these resources on the STMicroelectronics website.
