Overview
The STGF8NC60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using advanced PowerMESH technology. This device is designed to offer an excellent trade-off between switching performance and low on-state behavior, making it suitable for various high-frequency applications. The STGF8NC60KD is available in the TO-220FP package and is part of a family that includes the STGB8NC60KD, STGD8NC60KD, and STGP8NC60KD models.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector-emitter voltage (VGE = 0 V) | 600 | V |
| IC | Continuous collector current at TC = 25 °C | 15 | A |
| IC | Continuous collector current at TC = 100 °C | 8 | A |
| ICL | Turn-off latching current | 30 | A |
| ICP | Pulsed collector current | 30 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| IF | Diode RMS forward current at TC = 25 °C | 7 | A |
| IFSM | Surge non-repetitive forward current tp = 10 ms sinusoidal | 20 | A |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sink | 2.5 | kV |
| tscw | Short-circuit withstand time | 10 | μs |
| PTOT | Total power dissipation at TC = 25 °C | 62 | W |
| Tstg | Storage temperature range | -55 to 150 | °C |
| RthJC | Thermal resistance, junction-to-case IGBT | 2.0 | °C/W |
| RthJA | Thermal resistance, junction-to-ambient | 100 | °C/W |
Key Features
- Lower on-voltage drop (VCE(sat))
- Lower Cres / Cies ratio, reducing cross-conduction susceptibility
- Very soft ultra-fast recovery antiparallel diode
- Short-circuit withstand time of 10 μs
- High switching speed and low switching losses
- Suitable for resonant or soft-switching applications
Applications
- High frequency motor controls
- Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switch and resonant topologies
- Motor drives
Q & A
- What is the collector-emitter voltage rating of the STGF8NC60KD?
The collector-emitter voltage (VCES) is rated at 600 V.
- What is the continuous collector current at 25 °C and 100 °C for the STGF8NC60KD?
The continuous collector current is 15 A at 25 °C and 8 A at 100 °C.
- What is the short-circuit withstand time of the STGF8NC60KD?
The short-circuit withstand time is 10 μs.
- What are the thermal resistance values for the STGF8NC60KD?
The thermal resistance from junction to case (RthJC) is 2.0 °C/W, and from junction to ambient (RthJA) is 100 °C/W.
- What are the typical applications of the STGF8NC60KD?
The STGF8NC60KD is typically used in high frequency motor controls, SMPS and PFC, and motor drives.
- What is the package type of the STGF8NC60KD?
The STGF8NC60KD is available in the TO-220FP package.
- What is the total power dissipation at 25 °C for the STGF8NC60KD?
The total power dissipation at 25 °C is 62 W.
- What is the storage temperature range for the STGF8NC60KD?
The storage temperature range is -55 to 150 °C.
- Does the STGF8NC60KD have any special features for switching performance?
Yes, it has a very soft ultra-fast recovery antiparallel diode and is suitable for resonant or soft-switching applications.
- How does the STGF8NC60KD reduce cross-conduction susceptibility?
The STGF8NC60KD has a lower Cres / Cies ratio, which reduces cross-conduction susceptibility.
