Overview
The FGB3040G2-F085 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is part of the EcoSPARK®2 series, known for its high energy handling capabilities and robust design. It is specifically designed for automotive ignition coil driver circuits and coil on plug applications, offering reliable operation in demanding environments.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Collector to Emitter Breakdown Voltage (BVCER) | IC = 2 mA, VGE = 0, RGE = 1 kΩ, TJ = -40 to 150°C | 370 | 400 | 430 | V |
| Collector to Emitter Breakdown Voltage (BVCES) | IC = 10 mA, VGE = 0 V, RGE = 0, TJ = -40 to 150°C | 390 | 420 | 450 | V |
| Emitter to Collector Breakdown Voltage (BVECS) | IC = -20 mA, VGE = 0 V, TJ = 25°C | 28 | - | - | V |
| Gate to Emitter Breakdown Voltage (BVGES) | IGES = ±2 mA | ±12 | ±14 | - | V |
| Collector to Emitter Leakage Current (ICER) | VCE = 250 V, RGE = 1 kΩ, TJ = 25°C | - | - | 25 | μA |
| Gate Charge (QG) | IC = 10 A, VCE = 12 V, VGE = 5 V | - | 21 | - | nC |
| Gate to Emitter Threshold Voltage (VGE(TH)) | IC = 1 mA, VCE = VGE, TJ = 25°C | 1.3 | 1.7 | 2.2 | V |
| Thermal Resistance Junction to Case (RθJC) | - | - | - | 1 | °C/W |
Key Features
- High Energy Handling: Self Clamping Inductive Switching Energy (ESCIS) of 300 mJ at TJ = 25°C.
- Logic Level Gate Drive: Compatible with logic level gate drive signals.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive industry standards for reliability and performance.
- Rohs Compliant and Pb-Free: Environmentally friendly and compliant with RoHS regulations.
- High Voltage and Current Ratings: 400 V collector to emitter breakdown voltage and up to 25.6 A collector current.
- Low Thermal Resistance: Thermal resistance junction to case of 1 °C/W.
Applications
- Automotive Ignition Coil Driver Circuits: Ideal for driving ignition coils in automotive systems.
- Coil On Plug Applications: Suitable for coil on plug ignition systems where high energy and reliability are required.
Q & A
- What is the collector to emitter breakdown voltage of the FGB3040G2-F085?
The collector to emitter breakdown voltage (BVCER) is 400 V with a minimum of 370 V and a maximum of 430 V.
- What is the gate to emitter threshold voltage at 25°C?
The gate to emitter threshold voltage (VGE(TH)) at 25°C is between 1.3 V and 2.2 V.
- Is the FGB3040G2-F085 RoHS compliant?
- What are the typical applications of the FGB3040G2-F085?
The device is typically used in automotive ignition coil driver circuits and coil on plug applications.
- What is the thermal resistance junction to case of the FGB3040G2-F085?
The thermal resistance junction to case (RθJC) is 1 °C/W).
- What is the self-clamping inductive switching energy (ESCIS) at 25°C?
The self-clamping inductive switching energy (ESCIS) at 25°C is 300 mJ).
- What are the package options available for the FGB3040G2-F085?
The device is available in TO-263AB, TO-252AA, TO-220AB, and TO-262AA packages).
- Is the FGB3040G2-F085 qualified to AEC-Q101 standards?
- What is the maximum collector current of the FGB3040G2-F085?
The maximum collector current is up to 25.6 A).
- What is the gate charge at VGE = 5 V and VCE = 12 V?
The gate charge (QG) is approximately 21 nC at VGE = 5 V and VCE = 12 V).
