Overview
The FGH60T65SHD-F155 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. This device utilizes novel field stop IGBT technology, specifically designed for applications requiring low conduction and switching losses. It is part of ON Semiconductor's 3rd generation field stop IGBT series, offering optimal performance for various industrial and power management applications.
Key Specifications
| Parameter | Symbol | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | V | - | - | 650 |
| Gate to Emitter Voltage | VGES | V | - | - | ±20 |
| Transient Gate to Emitter Voltage | - | V | - | - | ±30 |
| Collector Current (TC = 25°C) | IC | A | - | - | 120 |
| Collector Current (TC = 100°C) | IC | A | - | - | 60 |
| Pulsed Collector Current (TC = 25°C) | ILM | A | - | - | 180 |
| Maximum Junction Temperature | TJ | °C | -55 | - | 175 |
| Thermal Resistance, Junction to Case (IGBT) | RθJC | °C/W | - | - | 0.43 |
| Thermal Resistance, Junction to Ambient | RθJA | °C/W | - | - | 40 |
| Collector to Emitter Saturation Voltage | VCE(sat) | V | - | 1.6 | 2.1 |
Key Features
- High Current Capability: The device can handle up to 120 A of collector current at 25°C and 60 A at 100°C.
- Low Saturation Voltage: A typical VCE(sat) of 1.6 V at IC = 60 A, ensuring low conduction losses.
- Positive Temperature Coefficient for Easy Parallel Operation: Facilitates easy parallel operation of multiple devices.
- Fast Switching: Fast turn-on and turn-off times, with turn-on delay time of 26 ns and turn-off delay time of 87 ns at 25°C.
- High Input Impedance: Reduces the need for complex gate drive circuits.
- Tight Parameter Distribution: Ensures consistent performance across different devices.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Solar Inverters: Ideal for solar power conversion systems due to its high efficiency and low losses.
- UPS (Uninterruptible Power Supplies): Used in backup power systems to ensure reliable operation.
- Welders: Suitable for welding applications requiring high current and fast switching.
- Telecom: Used in telecommunications equipment for power management.
- ESS (Energy Storage Systems): Applied in energy storage systems for efficient power handling.
- PFC (Power Factor Correction): Utilized in PFC circuits to improve power factor and reduce harmonic distortion.
Q & A
- What is the maximum collector to emitter voltage of the FGH60T65SHD-F155?
The maximum collector to emitter voltage (VCES) is 650 V.
- What is the typical collector to emitter saturation voltage at 60 A?
The typical collector to emitter saturation voltage (VCE(sat)) at 60 A is 1.6 V.
- What are the operating junction temperature limits for this IGBT?
The operating junction temperature (TJ) range is from -55°C to 175°C.
- What is the thermal resistance from junction to case for this device?
The thermal resistance from junction to case (RθJC) is 0.43 °C/W.
- Is the FGH60T65SHD-F155 Pb-Free and RoHS compliant?
- What are some typical applications for the FGH60T65SHD-F155?
Typical applications include solar inverters, UPS, welders, telecom, ESS, and PFC.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 120 A at 25°C and 60 A at 100°C.
- What is the turn-on delay time and turn-off delay time at 25°C?
The turn-on delay time is 26 ns and the turn-off delay time is 87 ns at 25°C.
- What is the maximum power dissipation at 25°C and 100°C?
The maximum power dissipation is 349 W at 25°C and 174 W at 100°C.
- What is the package type for the FGH60T65SHD-F155?
The device is packaged in a TO-247-3LD case.
