FGH60T65SHD-F155
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onsemi FGH60T65SHD-F155

Manufacturer No:
FGH60T65SHD-F155
Manufacturer:
onsemi
Package:
Bulk
Description:
IGBT TRENCH/FS 650V 120A TO247
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Introduction

Overview

The FGH60T65SHD-F155 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. This device utilizes novel field stop IGBT technology, specifically designed for applications requiring low conduction and switching losses. It is part of ON Semiconductor's 3rd generation field stop IGBT series, offering optimal performance for various industrial and power management applications.

Key Specifications

Parameter Symbol Unit Min Typ Max
Collector to Emitter Voltage VCES V - - 650
Gate to Emitter Voltage VGES V - - ±20
Transient Gate to Emitter Voltage - V - - ±30
Collector Current (TC = 25°C) IC A - - 120
Collector Current (TC = 100°C) IC A - - 60
Pulsed Collector Current (TC = 25°C) ILM A - - 180
Maximum Junction Temperature TJ °C -55 - 175
Thermal Resistance, Junction to Case (IGBT) RθJC °C/W - - 0.43
Thermal Resistance, Junction to Ambient RθJA °C/W - - 40
Collector to Emitter Saturation Voltage VCE(sat) V - 1.6 2.1

Key Features

  • High Current Capability: The device can handle up to 120 A of collector current at 25°C and 60 A at 100°C.
  • Low Saturation Voltage: A typical VCE(sat) of 1.6 V at IC = 60 A, ensuring low conduction losses.
  • Positive Temperature Coefficient for Easy Parallel Operation: Facilitates easy parallel operation of multiple devices.
  • Fast Switching: Fast turn-on and turn-off times, with turn-on delay time of 26 ns and turn-off delay time of 87 ns at 25°C.
  • High Input Impedance: Reduces the need for complex gate drive circuits.
  • Tight Parameter Distribution: Ensures consistent performance across different devices.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • Solar Inverters: Ideal for solar power conversion systems due to its high efficiency and low losses.
  • UPS (Uninterruptible Power Supplies): Used in backup power systems to ensure reliable operation.
  • Welders: Suitable for welding applications requiring high current and fast switching.
  • Telecom: Used in telecommunications equipment for power management.
  • ESS (Energy Storage Systems): Applied in energy storage systems for efficient power handling.
  • PFC (Power Factor Correction): Utilized in PFC circuits to improve power factor and reduce harmonic distortion.

Q & A

  1. What is the maximum collector to emitter voltage of the FGH60T65SHD-F155?

    The maximum collector to emitter voltage (VCES) is 650 V.

  2. What is the typical collector to emitter saturation voltage at 60 A?

    The typical collector to emitter saturation voltage (VCE(sat)) at 60 A is 1.6 V.

  3. What are the operating junction temperature limits for this IGBT?

    The operating junction temperature (TJ) range is from -55°C to 175°C.

  4. What is the thermal resistance from junction to case for this device?

    The thermal resistance from junction to case (RθJC) is 0.43 °C/W.

  5. Is the FGH60T65SHD-F155 Pb-Free and RoHS compliant?
  6. What are some typical applications for the FGH60T65SHD-F155?

    Typical applications include solar inverters, UPS, welders, telecom, ESS, and PFC.

  7. What is the maximum collector current at 25°C and 100°C?

    The maximum collector current is 120 A at 25°C and 60 A at 100°C.

  8. What is the turn-on delay time and turn-off delay time at 25°C?

    The turn-on delay time is 26 ns and the turn-off delay time is 87 ns at 25°C.

  9. What is the maximum power dissipation at 25°C and 100°C?

    The maximum power dissipation is 349 W at 25°C and 174 W at 100°C.

  10. What is the package type for the FGH60T65SHD-F155?

    The device is packaged in a TO-247-3LD case.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):180 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 60A
Power - Max:349 W
Switching Energy:1.69mJ (on), 630µJ (off)
Input Type:Standard
Gate Charge:102 nC
Td (on/off) @ 25°C:26ns/87ns
Test Condition:400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr):34.6 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number FGH60T65SHD-F155 FGH60T65SQD-F155 FGH40T65SHD-F155
Manufacturer onsemi onsemi Fairchild Semiconductor
Product Status Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 120 A 120 A 80 A
Current - Collector Pulsed (Icm) 180 A 240 A 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 60A 2.1V @ 15V, 60A 2.1V @ 15V, 40A
Power - Max 349 W 333 W 268 W
Switching Energy 1.69mJ (on), 630µJ (off) 227µJ (on), 100µJ (off) 1.01mJ (on), 297µJ (off)
Input Type Standard Standard Standard
Gate Charge 102 nC 79 nC 72.2 nC
Td (on/off) @ 25°C 26ns/87ns 20.8ns/102ns 19.2ns/65.6ns
Test Condition 400V, 60A, 6Ohm, 15V 400V, 15A, 4.7Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 34.6 ns 34.6 ns 31.8 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247 Long Leads

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