Overview
The STGF3NC120HD is a high-voltage, very fast Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is designed using the PowerMESH™ technology and is combined with a high-voltage ultrafast diode. It offers an excellent trade-off between low conduction losses and fast switching performance, making it suitable for a variety of high-power applications.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector-emitter voltage (VGE = 0) | 1200 | V |
| IC (TC = 25 °C) | Continuous collector current | 6 A (TO-220FP), 14 A (TO-220/D²PAK) | A |
| IC (TC = 100 °C) | Continuous collector current | 3 A (TO-220FP), 7 A (TO-220/D²PAK) | A |
| ICL | Turn-off latching current | 14 A | A |
| ICP | Pulsed collector current | 20 A | A |
| VGE | Gate-emitter voltage | ± 20 V | V |
| IF (RMS) | Diode RMS forward current at TC = 25 °C | 3 A | A |
| IFSM | Surge non-repetitive forward current | 12 A | A |
| PTOT | Total dissipation at TC = 25 °C | 25 W (TO-220FP), 75 W (TO-220/D²PAK) | W |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sink | 2500 V | V |
| TJ | Operating junction temperature | -55 to 150 °C | °C |
| RthJC (IGBT) | Thermal resistance junction-case | 5 °C/W (TO-220FP), 1.65 °C/W (TO-220/D²PAK) | °C/W |
| RthJA | Thermal resistance junction-ambient | 62.5 °C/W | °C/W |
Key Features
- High Voltage Capability: The STGF3NC120HD operates with a collector-emitter voltage of up to 1200 V.
- High Speed: This IGBT is designed for fast switching performance, making it suitable for high-frequency applications.
- Ultrafast Diode: The device includes a very soft ultrafast recovery anti-parallel diode, enhancing its switching characteristics.
- Low Conduction Losses: It offers low conduction losses, contributing to higher efficiency in power conversion.
- PowerMESH™ Technology: Designed using STMicroelectronics' PowerMESH™ technology, which ensures high performance and reliability.
Applications
- Home Appliances: Suitable for use in various home appliances that require high-power and efficient switching.
- Lighting Systems: Can be used in lighting systems that demand high voltage and fast switching capabilities.
- Industrial Power Conversion: Ideal for industrial applications requiring high-power conversion with minimal losses.
Q & A
- What is the maximum collector-emitter voltage of the STGF3NC120HD?
The maximum collector-emitter voltage is 1200 V.
- What are the continuous collector current ratings at 25 °C and 100 °C?
At 25 °C, it is 6 A for TO-220FP and 14 A for TO-220/D²PAK. At 100 °C, it is 3 A for TO-220FP and 7 A for TO-220/D²PAK.
- What is the maximum pulsed collector current?
The maximum pulsed collector current is 20 A.
- What is the gate-emitter voltage range?
The gate-emitter voltage range is ± 20 V.
- What is the thermal resistance junction-case for the TO-220FP package?
The thermal resistance junction-case for the TO-220FP package is 5 °C/W.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 150 °C.
- What are the typical applications of the STGF3NC120HD?
Typical applications include home appliances, lighting systems, and industrial power conversion.
- What technology is used in the design of the STGF3NC120HD?
The device is designed using STMicroelectronics' PowerMESH™ technology.
- What is the significance of the ultrafast diode in the STGF3NC120HD?
The ultrafast diode enhances the switching characteristics by providing very soft ultrafast recovery.
- What are the available package types for the STGF3NC120HD?
The available package types are TO-220FP, TO-220, and D²PAK.
