Overview
The STGF10NB60SD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is part of the STPOWER IGBT family and is designed using the advanced Power MESH™ process. It is characterized by its extremely low on-state voltage drop, particularly in low-frequency working conditions up to 1 kHz. The STGF10NB60SD is suitable for various high-power applications requiring efficient and reliable switching performance.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCE) | 600 V |
| Collector Current (IC) | 23 A |
| Power Dissipation (PD) | 25 W |
| Package Type | TO-220FP |
| Gate-Emitter Voltage (VGE) | ±20 V |
| Pulsed Collector Current (ICM) | 80 A |
| Mounting Type | Through Hole (THT) |
| Gate Charge (QG) | 33 nC |
| Operating Temperature Range | -40°C to 150°C |
Key Features
- Low on-state voltage drop (VCE(sat))
- High current capability
- Very soft and ultra-fast recovery antiparallel diode
- Integrated anti-parallel diode
- Advanced Power MESH™ process for efficient performance
Applications
The STGF10NB60SD is designed for use in various high-power applications, including but not limited to:
- Power supplies and converters
- Motor drives and control systems
- Industrial automation and control systems
- Renewable energy systems such as solar and wind power inverters
- High-efficiency power switching applications
Q & A
- What is the collector-emitter voltage rating of the STGF10NB60SD?
The collector-emitter voltage rating is 600 V. - What is the maximum collector current of the STGF10NB60SD?
The maximum collector current is 23 A. - What type of package does the STGF10NB60SD come in?
The STGF10NB60SD comes in a TO-220FP package. - What is the gate-emitter voltage range for the STGF10NB60SD?
The gate-emitter voltage range is ±20 V. - Does the STGF10NB60SD have an integrated anti-parallel diode?
Yes, it does have an integrated anti-parallel diode. - What is the operating temperature range for the STGF10NB60SD?
The operating temperature range is -40°C to 150°C. - What is the power dissipation capability of the STGF10NB60SD?
The power dissipation capability is 25 W. - What is the pulsed collector current rating of the STGF10NB60SD?
The pulsed collector current rating is 80 A. - What is the gate charge of the STGF10NB60SD?
The gate charge is 33 nC. - What process technology is used in the STGF10NB60SD?
The STGF10NB60SD uses the advanced Power MESH™ process.
