STGYA75H120DF2
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STMicroelectronics STGYA75H120DF2

Manufacturer No:
STGYA75H120DF2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRENCH GATE FIELD-STOP 1200 V, 7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGYA75H120DF2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the H series, known for its high-speed operation and advanced proprietary trench gate field-stop structure. This IGBT is designed to operate at 1200 V with a current rating of 75 A, making it suitable for a variety of high-power applications. The device is packaged in a TO-247 long leads package, which offers low thermal resistance and enhanced reliability.

Key Specifications

Parameter Value
Voltage Rating (VCE) 1200 V
Current Rating (IC) 75 A
Maximum Power Dissipation (PD) 750 W
Package Type TO-247 long leads
Operating Frequency 20 to 100 kHz

Key Features

  • Advanced Proprietary Trench Gate Field-Stop Structure: Enhances performance and reduces losses.
  • High-Speed Operation: Suitable for applications requiring frequencies between 20 to 100 kHz.
  • Low Thermal Resistance: The TO-247 long leads package ensures efficient heat dissipation.
  • High Reliability: Designed for robust performance in demanding environments.

Applications

The STGYA75H120DF2 IGBT is ideal for various high-power applications, including:

  • Power Supplies and Converters: High-efficiency power conversion systems.
  • Motor Drives: For industrial and automotive motor control systems.
  • Renewable Energy Systems: Solar and wind power inverters and converters.
  • Industrial Automation: High-power control and switching applications.

Q & A

  1. What is the voltage rating of the STGYA75H120DF2 IGBT?

    The voltage rating of the STGYA75H120DF2 IGBT is 1200 V.

  2. What is the current rating of the STGYA75H120DF2 IGBT?

    The current rating of the STGYA75H120DF2 IGBT is 75 A.

  3. What is the maximum power dissipation of the STGYA75H120DF2 IGBT?

    The maximum power dissipation of the STGYA75H120DF2 IGBT is 750 W.

  4. In what package is the STGYA75H120DF2 IGBT available?

    The STGYA75H120DF2 IGBT is available in a TO-247 long leads package.

  5. What is the operating frequency range of the STGYA75H120DF2 IGBT?

    The operating frequency range of the STGYA75H120DF2 IGBT is 20 to 100 kHz.

  6. What is the key feature of the trench gate field-stop structure in the STGYA75H120DF2 IGBT?

    The trench gate field-stop structure enhances performance and reduces losses.

  7. Is the STGYA75H120DF2 IGBT suitable for high-power motor drives?

    Yes, the STGYA75H120DF2 IGBT is suitable for high-power motor drives.

  8. Can the STGYA75H120DF2 IGBT be used in renewable energy systems?

    Yes, the STGYA75H120DF2 IGBT can be used in renewable energy systems such as solar and wind power inverters and converters.

  9. What are some common applications of the STGYA75H120DF2 IGBT in industrial automation?

    The STGYA75H120DF2 IGBT is commonly used in high-power control and switching applications in industrial automation.

  10. How does the TO-247 long leads package benefit the STGYA75H120DF2 IGBT?

    The TO-247 long leads package ensures low thermal resistance and efficient heat dissipation.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 75A
Power - Max:750 W
Switching Energy:4.3mJ (on), 3.9mJ (off)
Input Type:Standard
Gate Charge:313 nC
Td (on/off) @ 25°C:61ns/366ns
Test Condition:600V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr):356 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
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