IKW50N60T
  • Share:

Infineon Technologies IKW50N60T

Manufacturer No:
IKW50N60T
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IKW50N60 - DISCRETE IGBT WITH AN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. It is part of the TRENCHSTOP™ series, which combines TRENCHSTOP™ and Fieldstop technologies to offer advanced characteristics for high-power applications. This IGBT is designed for use in frequency converters and uninterrupted power supplies, making it a versatile component for various industrial power control systems.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCE600V
DC Collector Current (TC = 25°C)IC50A
Pulsed Collector Current (limited by Tjmax)IC(puls)150A
Gate-Emitter VoltageVGE±20V
Collector-Emitter Saturation Voltage (typ., Tj = 25°C)VCE(sat)1.5V
Maximum Junction TemperatureTj-40 to +175°C
Short Circuit Withstand TimetSC5 μs
Power Dissipation (TC = 25°C)Ptot333W
PackageTO-247-3

Key Features

  • Very low VCE(sat) of 1.5V (typ.) at Tj = 25°C
  • Maximum Junction Temperature of 175°C
  • Short circuit withstand time of 5 μs
  • TRENCHSTOP™ and Fieldstop technology for high ruggedness and temperature stable behavior
  • Very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI and low gate charge
  • Soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Pb-free lead plating; RoHS compliant

Applications

The IKW50N60T IGBT is primarily designed for use in:

  • Frequency Converters
  • Uninterrupted Power Supplies (UPS)

Q & A

  1. What is the maximum collector-emitter voltage of the IKW50N60T IGBT?
    The maximum collector-emitter voltage is 600 V.
  2. What is the typical collector-emitter saturation voltage at 25°C?
    The typical collector-emitter saturation voltage is 1.5 V.
  3. What is the maximum junction temperature for the IKW50N60T?
    The maximum junction temperature is 175°C.
  4. How long can the IKW50N60T withstand a short circuit?
    The IKW50N60T can withstand a short circuit for 5 μs.
  5. What is the maximum DC collector current at 25°C?
    The maximum DC collector current at 25°C is 50 A.
  6. What package type is the IKW50N60T available in?
    The IKW50N60T is available in the TO-247-3 package.
  7. Is the IKW50N60T RoHS compliant?
    Yes, the IKW50N60T is Pb-free and RoHS compliant.
  8. What are the primary applications of the IKW50N60T IGBT?
    The primary applications include frequency converters and uninterrupted power supplies.
  9. What technology does the IKW50N60T use?
    The IKW50N60T uses TRENCHSTOP™ and Fieldstop technology.
  10. Does the IKW50N60T have any special diode features?
    Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled HE diode.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
505

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number IKW50N60T IKW50N60TA IKW30N60T
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) - - -
Vce(on) (Max) @ Vge, Ic - - -
Power - Max - - -
Switching Energy - - -
Input Type - - -
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

Related Product By Categories

STGF10M65DF2
STGF10M65DF2
STMicroelectronics
IGBT TRENCH 650V 20A TO220FP
FGA40T65SHDF
FGA40T65SHDF
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
NGTB40N135IHRWG
NGTB40N135IHRWG
onsemi
IGBT TRENCH/FS 1350V 80A TO247
STGW39NC60VD
STGW39NC60VD
STMicroelectronics
IGBT 600V 80A 250W TO247
FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109
onsemi
IGBT 1200V 50A 312W TO3P
STGWT30H60DFB
STGWT30H60DFB
STMicroelectronics
IGBT 600V 60A 260W TO3PL
NGTB50N65FL2WG
NGTB50N65FL2WG
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
STGB20NC60VT4
STGB20NC60VT4
STMicroelectronics
IGBT 600V 60A 200W D2PAK
ISL9V5036S3ST_SB82170
ISL9V5036S3ST_SB82170
onsemi
INTEGRATED CIRCUIT
FGH75T65SQDT_F155
FGH75T65SQDT_F155
onsemi
650V FS4 TRENCH IGBT
FGA50T65SHD-01
FGA50T65SHD-01
onsemi
FGA50T65SHD-01

Related Product By Brand

BAS7005E6433HTMA1
BAS7005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS 40 B5003
BAS 40 B5003
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
BC847SH6433XTMA1
BC847SH6433XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BC860BE6327
BC860BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BCX53-16E6433
BCX53-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRLML2402TRPBF
IRLML2402TRPBF
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT23
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5
TLE6208-6GXUMA2
TLE6208-6GXUMA2
Infineon Technologies
BRUSH DC MOTOR CONTROLLER
BTS4140NHUMA1
BTS4140NHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4