IKW50N60T
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Infineon Technologies IKW50N60T

Manufacturer No:
IKW50N60T
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IKW50N60 - DISCRETE IGBT WITH AN
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Product Introduction

Overview

The IKW50N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. It is part of the TRENCHSTOP™ series, which combines TRENCHSTOP™ and Fieldstop technologies to offer advanced characteristics for high-power applications. This IGBT is designed for use in frequency converters and uninterrupted power supplies, making it a versatile component for various industrial power control systems.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCE600V
DC Collector Current (TC = 25°C)IC50A
Pulsed Collector Current (limited by Tjmax)IC(puls)150A
Gate-Emitter VoltageVGE±20V
Collector-Emitter Saturation Voltage (typ., Tj = 25°C)VCE(sat)1.5V
Maximum Junction TemperatureTj-40 to +175°C
Short Circuit Withstand TimetSC5 μs
Power Dissipation (TC = 25°C)Ptot333W
PackageTO-247-3

Key Features

  • Very low VCE(sat) of 1.5V (typ.) at Tj = 25°C
  • Maximum Junction Temperature of 175°C
  • Short circuit withstand time of 5 μs
  • TRENCHSTOP™ and Fieldstop technology for high ruggedness and temperature stable behavior
  • Very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI and low gate charge
  • Soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Pb-free lead plating; RoHS compliant

Applications

The IKW50N60T IGBT is primarily designed for use in:

  • Frequency Converters
  • Uninterrupted Power Supplies (UPS)

Q & A

  1. What is the maximum collector-emitter voltage of the IKW50N60T IGBT?
    The maximum collector-emitter voltage is 600 V.
  2. What is the typical collector-emitter saturation voltage at 25°C?
    The typical collector-emitter saturation voltage is 1.5 V.
  3. What is the maximum junction temperature for the IKW50N60T?
    The maximum junction temperature is 175°C.
  4. How long can the IKW50N60T withstand a short circuit?
    The IKW50N60T can withstand a short circuit for 5 μs.
  5. What is the maximum DC collector current at 25°C?
    The maximum DC collector current at 25°C is 50 A.
  6. What package type is the IKW50N60T available in?
    The IKW50N60T is available in the TO-247-3 package.
  7. Is the IKW50N60T RoHS compliant?
    Yes, the IKW50N60T is Pb-free and RoHS compliant.
  8. What are the primary applications of the IKW50N60T IGBT?
    The primary applications include frequency converters and uninterrupted power supplies.
  9. What technology does the IKW50N60T use?
    The IKW50N60T uses TRENCHSTOP™ and Fieldstop technology.
  10. Does the IKW50N60T have any special diode features?
    Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled HE diode.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number IKW50N60T IKW50N60TA IKW30N60T
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) - - -
Vce(on) (Max) @ Vge, Ic - - -
Power - Max - - -
Switching Energy - - -
Input Type - - -
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

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