IKW50N60T
  • Share:

Infineon Technologies IKW50N60T

Manufacturer No:
IKW50N60T
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IKW50N60 - DISCRETE IGBT WITH AN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. It is part of the TRENCHSTOP™ series, which combines TRENCHSTOP™ and Fieldstop technologies to offer advanced characteristics for high-power applications. This IGBT is designed for use in frequency converters and uninterrupted power supplies, making it a versatile component for various industrial power control systems.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCE600V
DC Collector Current (TC = 25°C)IC50A
Pulsed Collector Current (limited by Tjmax)IC(puls)150A
Gate-Emitter VoltageVGE±20V
Collector-Emitter Saturation Voltage (typ., Tj = 25°C)VCE(sat)1.5V
Maximum Junction TemperatureTj-40 to +175°C
Short Circuit Withstand TimetSC5 μs
Power Dissipation (TC = 25°C)Ptot333W
PackageTO-247-3

Key Features

  • Very low VCE(sat) of 1.5V (typ.) at Tj = 25°C
  • Maximum Junction Temperature of 175°C
  • Short circuit withstand time of 5 μs
  • TRENCHSTOP™ and Fieldstop technology for high ruggedness and temperature stable behavior
  • Very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI and low gate charge
  • Soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Pb-free lead plating; RoHS compliant

Applications

The IKW50N60T IGBT is primarily designed for use in:

  • Frequency Converters
  • Uninterrupted Power Supplies (UPS)

Q & A

  1. What is the maximum collector-emitter voltage of the IKW50N60T IGBT?
    The maximum collector-emitter voltage is 600 V.
  2. What is the typical collector-emitter saturation voltage at 25°C?
    The typical collector-emitter saturation voltage is 1.5 V.
  3. What is the maximum junction temperature for the IKW50N60T?
    The maximum junction temperature is 175°C.
  4. How long can the IKW50N60T withstand a short circuit?
    The IKW50N60T can withstand a short circuit for 5 μs.
  5. What is the maximum DC collector current at 25°C?
    The maximum DC collector current at 25°C is 50 A.
  6. What package type is the IKW50N60T available in?
    The IKW50N60T is available in the TO-247-3 package.
  7. Is the IKW50N60T RoHS compliant?
    Yes, the IKW50N60T is Pb-free and RoHS compliant.
  8. What are the primary applications of the IKW50N60T IGBT?
    The primary applications include frequency converters and uninterrupted power supplies.
  9. What technology does the IKW50N60T use?
    The IKW50N60T uses TRENCHSTOP™ and Fieldstop technology.
  10. Does the IKW50N60T have any special diode features?
    Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled HE diode.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
505

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number IKW50N60T IKW50N60TA IKW30N60T
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) - - -
Vce(on) (Max) @ Vge, Ic - - -
Power - Max - - -
Switching Energy - - -
Input Type - - -
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

Related Product By Categories

FGH40N60SMD
FGH40N60SMD
onsemi
IGBT FIELD STOP 600V 80A TO247-3
FGH60T65SQD-F155
FGH60T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247-3
STGD4M65DF2
STGD4M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
AFGB40T65SQDN
AFGB40T65SQDN
onsemi
650V/40A FS4 IGBT TO263 A
STGP8NC60KD
STGP8NC60KD
STMicroelectronics
IGBT 600V 15A 65W TO220
STGB40H65FB
STGB40H65FB
STMicroelectronics
IGBT BIPO 650V 40A D2PAK
STGWA40H65DFB
STGWA40H65DFB
STMicroelectronics
IGBT TRENCH 650V 80A TO247
STGYA120M65DF2
STGYA120M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
FGD3245G2-F085V
FGD3245G2-F085V
onsemi
IGBT 450V DPAK
STGWA15M120DF3
STGWA15M120DF3
STMicroelectronics
IGBT 1200V 30A 259W
IKW75N60TXK
IKW75N60TXK
Infineon Technologies
IKW75N60 - DISCRETE IGBT WITH AN
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR

Related Product By Brand

BAS40-06WE6327
BAS40-06WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BC846SH6727XTSA1
BC846SH6727XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BCX5316E6327HTSA1
BCX5316E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
SAK-TC1796-256F150EBC
SAK-TC1796-256F150EBC
Infineon Technologies
32-BIT RISC FLASH MCU
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5