Overview
The FGH40N60SMDF-F085 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Fairchild Semiconductor, now part of ON Semiconductor. This device is designed using novel Field Stop IGBT technology, offering optimal performance for applications requiring low conduction and switching losses. The IGBT is packaged in a TO-247-3LD case and includes an anti-parallel diode, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Symbol | Unit | Typical | Maximum |
|---|---|---|---|---|
| Collector to Emitter Voltage | VCE | V | - | 600 |
| Gate to Emitter Voltage | VGE | V | - | ±20 |
| Collector Current at 25°C | IC | A | 80 | 80 |
| Pulsed Collector Current at 25°C | ICM | A | - | 120 |
| Maximum Power Dissipation at 25°C | PD | W | - | 349 |
| Collector-Emitter Saturation Voltage at 25°C | VCE(sat) | V | 1.7 | - |
| Maximum Junction Temperature | TJ | °C | - | 175 |
| Rise Time | tr | nS | 20 | - |
| Output Capacitance | Coes | pF | 180 | - |
| Total Gate Charge | Qg | nC | 122 | - |
Key Features
- Low saturation voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 40 A
- High current handling capability: Up to 80 A continuous collector current at 25°C
- Positive temperature coefficient for easy parallel operating
- High input impedance
- Fast switching: Low turn-on and turn-off switching losses
- Tightened parameter distribution for consistent performance
- RoHS compliant and Pb-free
- Qualified to automotive requirements of AEC-Q101
Applications
- Automotive Chargers and Converters
- Inverters, Power Factor Correction (PFC), and Uninterruptible Power Supplies (UPS)
- Consumer Appliances
- High Voltage Auxiliaries
- Single-Ended Quasi-Resonant Topology and Class-E Power Amplifiers
Q & A
- What is the maximum collector-emitter voltage of the FGH40N60SMDF-F085 IGBT? The maximum collector-emitter voltage is 600 V
- What is the continuous collector current at 25°C for this IGBT? The continuous collector current at 25°C is 80 A
- What is the maximum power dissipation of the FGH40N60SMDF-F085 at 25°C? The maximum power dissipation at 25°C is 349 W
- What is the typical collector-emitter saturation voltage at 40 A? The typical collector-emitter saturation voltage at 40 A is 1.7 V
- What is the maximum junction temperature for this device? The maximum junction temperature is 175°C
- Is the FGH40N60SMDF-F085 RoHS compliant? Yes, the device is RoHS compliant and Pb-free
- What are some common applications for the FGH40N60SMDF-F085 IGBT? Common applications include automotive chargers, inverters, PFC, UPS, and consumer appliances
- What is the package type for the FGH40N60SMDF-F085? The device is packaged in a TO-247-3LD case
- Does the FGH40N60SMDF-F085 include an anti-parallel diode? Yes, it includes an anti-parallel diode
- What is the typical rise time for the FGH40N60SMDF-F085 IGBT? The typical rise time is 20 nS
