Overview
The HGT1S10N120BNST is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is part of the MOS gated high voltage switching IGBT family, combining the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. It is designed for high voltage switching applications operating at moderate frequencies, where low conduction losses are essential.
Key Specifications
| Parameter | Symbol | Test Conditions | Min | Units | ||
|---|---|---|---|---|---|---|
| Collector to Emitter Voltage | BVCES | IC = 250µA, VGE = 0V | - | - | 1200 | V |
| Collector Current Continuous at TC = 25°C | IC25 | - | - | - | 35 | A |
| Collector Current Continuous at TC = 110°C | IC110 | - | - | - | 17 | A |
| Collector Current Pulsed | ICM | Note 1 | - | - | 80 | A |
| Gate to Emitter Voltage Continuous | VGES | - | - | ±20 | V | |
| Gate to Emitter Voltage Pulsed | VGEM | - | - | ±30 | V | |
| Switching Safe Operating Area at TJ = 150°C | SSOA | TJ = 150°C, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V | - | - | 55 | A |
| Power Dissipation Total at TC = 25°C | PD | - | - | - | 298 | W |
| Collector to Emitter Saturation Voltage | VCE(SAT) | IC = 10A, VGE = 15V, TC = 25°C | - | 2.45 | 2.7 | V |
| Gate to Emitter Threshold Voltage | VGE(TH) | IC = 90µA, VCE = VGE | 6.0 | 6.8 | - | V |
| Gate to Emitter Leakage Current | IGES | VGE = ±20V | - | - | ±250 nA | nA |
Key Features
- High input impedance similar to MOSFETs
- Low on-state conduction loss similar to bipolar transistors
- 1200V switching SOA capability
- Typical fall time of 23-26 ns
- High collector current capability (up to 35A continuous at TC = 25°C)
- Wide range of gate to emitter voltage (±20V continuous, ±30V pulsed)
- High power dissipation (up to 298W at TC = 25°C)
Applications
- AC and DC motor controls
- Power supplies
- Drivers for solenoids, relays, and contactors
- High voltage switching applications operating at moderate frequencies
Q & A
- What is the maximum collector to emitter voltage of the HGT1S10N120BNST IGBT?
The maximum collector to emitter voltage is 1200V.
- What is the continuous collector current at TC = 25°C for this IGBT?
The continuous collector current at TC = 25°C is 35A.
- What is the typical fall time of the HGT1S10N120BNST IGBT?
The typical fall time is between 23-26 ns.
- What are the typical applications of the HGT1S10N120BNST IGBT?
Typical applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.
- What is the gate to emitter threshold voltage of this IGBT?
The gate to emitter threshold voltage is between 6.0V and 6.8V.
- What is the maximum power dissipation at TC = 25°C for this device?
The maximum power dissipation at TC = 25°C is 298W.
- How does the HGT1S10N120BNST IGBT handle high voltage switching?
The IGBT is designed to handle high voltage switching with a switching safe operating area (SSOA) of 55A at 1200V.
- What is the significance of the NPT (Non-Punch Through) design in this IGBT?
The NPT design ensures that the device can operate efficiently at high voltages without the risk of punch-through, which can lead to device failure.
- How does the gate to emitter leakage current affect the performance of the IGBT?
The gate to emitter leakage current is very low (±250 nA), which helps in minimizing unnecessary power losses and ensuring reliable operation.
- What precautions should be taken when handling the HGT1S10N120BNST IGBT?
Handling precautions include protecting the device from electrostatic discharge (ESD) to prevent gate-insulation damage.
