Overview
The NGTB25N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Field Stop II Trench construction. This device is designed to provide superior performance in demanding switching applications, offering low on-state voltage and minimal switching loss. It is particularly well-suited for applications such as solar inverters, uninterruptible power supplies (UPS), and welding.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter Voltage | VCES | 1200 | V |
| Collector Current @ TC = 25°C / @ TC = 100°C | IC | 50 / 25 | A |
| Pulsed Collector Current, Tpulse Limited by TJmax | ICM | 100 | A |
| Diode Forward Current @ TC = 25°C / @ TC = 100°C | IF | 50 / 25 | A |
| Diode Pulsed Current, Tpulse Limited by TJmax | IFM | 100 | A |
| Gate-emitter Voltage | VGE | ±20 | V |
| Transient Gate-emitter Voltage (Tpulse = 5 μs, D < 0.10) | VGE | ±30 | V |
| Power Dissipation @ TC = 25°C / @ TC = 100°C | PD | 385 / 192 | W |
| Short Circuit Withstand Time | TSC | 10 μs | μs |
| Operating Junction Temperature Range | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
| Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds | TSLD | 260 | °C |
| Thermal Resistance Junction-to-Case for IGBT | RJC | 0.39 | °C/W |
| Thermal Resistance Junction-to-Ambient | RJA | 40 | °C/W |
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature (TJmax) of 175°C
- Soft and Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 μs Short Circuit Capability
- Pb-Free Device
Applications
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
Q & A
- What is the maximum collector-emitter voltage of the NGTB25N120FL2WG IGBT?
The maximum collector-emitter voltage (VCES) is 1200 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 50 A at 25°C and 25 A at 100°C.
- What is the short circuit withstand time of the device?
The short circuit withstand time (TSC) is 10 μs.
- What is the operating junction temperature range of the NGTB25N120FL2WG?
The operating junction temperature range is -55°C to +175°C.
- Is the NGTB25N120FL2WG a Pb-Free device?
- What are the typical applications of the NGTB25N120FL2WG IGBT?
The typical applications include solar inverters, uninterruptible power supplies (UPS), and welding.
- What is the thermal resistance junction-to-case for the IGBT?
The thermal resistance junction-to-case (RJC) for the IGBT is 0.39 °C/W.
- What is the gate-emitter threshold voltage of the device?
The gate-emitter threshold voltage (VGE(th)) ranges from 4.5 V to 6.5 V.
- What is the turn-on delay time of the NGTB25N120FL2WG at 25°C?
The turn-on delay time (td(on)) at 25°C is approximately 87 ns.
- What is the forward voltage of the diode at 25 A and 175°C?
The forward voltage (VF) of the diode at 25 A and 175°C is approximately 2.10 V.
