Overview
The STGW28IH125DF is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the IH series and is designed using an advanced proprietary trench gate field-stop structure. It is optimized for both conduction and switching losses, making it suitable for various high-power applications. The STGW28IH125DF comes in TO-247 and TO-3P packages and is co-packaged with a low drop forward voltage freewheeling diode, enhancing its efficiency in resonant and soft-switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 1250 | V |
| Continuous collector current at TC = 25 °C | 60 | A |
| Continuous collector current at TC = 100 °C | 30 | A |
| Pulsed collector current | 120 | A |
| Gate-emitter voltage | ±20 | V |
| Maximum junction temperature | 175 | °C |
| Thermal resistance junction-case (IGBT) | 0.4 | °C/W |
| Thermal resistance junction-case (diode) | 1.47 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) | 2.0 - 2.5 | V |
| Forward on-voltage (VF) | 1.2 - 1.6 | V |
| Gate threshold voltage (VGE(th)) | 5 - 7 | V |
Key Features
- Designed for soft commutation only
- Minimized tail current
- Tight parameters distribution for safe paralleling
- Low thermal resistance
- Lead-free package
- Co-packaged with a low drop forward voltage freewheeling diode
- Optimized for both conduction and switching losses
Applications
- Induction heating
- Microwave oven
- Resonant converters
Q & A
- What is the maximum collector-emitter voltage of the STGW28IH125DF? The maximum collector-emitter voltage is 1250 V.
- What is the continuous collector current at 25 °C and 100 °C? The continuous collector current is 60 A at 25 °C and 30 A at 100 °C.
- What is the maximum junction temperature? The maximum junction temperature is 175 °C.
- What type of structure is used in the STGW28IH125DF? It uses an advanced proprietary trench gate field-stop structure.
- What are the typical applications of the STGW28IH125DF? Typical applications include induction heating, microwave ovens, and resonant converters.
- Is the STGW28IH125DF co-packaged with a diode? Yes, it is co-packaged with a low drop forward voltage freewheeling diode.
- What are the package options for the STGW28IH125DF? The device is available in TO-247 and TO-3P packages.
- What is the thermal resistance junction-case for the IGBT and diode? The thermal resistance junction-case is 0.4 °C/W for the IGBT and 1.47 °C/W for the diode.
- What is the collector-emitter saturation voltage (VCE(sat))? The collector-emitter saturation voltage is typically between 2.0 V and 2.5 V.
- Is the package lead-free? Yes, the package is lead-free.
