STGW60H65DFB-4
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STMicroelectronics STGW60H65DFB-4

Manufacturer No:
STGW60H65DFB-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT
Delivery:
Payment:
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Product Introduction

Overview

The STGW60H65DFB-4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the HB series, which is designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of frequency converters. This IGBT utilizes an advanced proprietary trench gate field-stop structure, ensuring high-speed switching capabilities and minimized tail current. The device is packaged in a TO-247 format, suitable for various high-power applications.

Key Specifications

Parameter Value Unit
Collector-emitter voltage (VCE) 650 V
Continuous collector current at TC = 25 °C 80 A
Continuous collector current at TC = 100 °C 60 A
Pulsed collector current 240 A
Gate-emitter voltage ±20 V
Maximum junction temperature (TJ) 175 °C
Thermal resistance junction-case (RthJC) for IGBT 0.4 °C/W
Thermal resistance junction-case (RthJC) for diode 1.14 °C/W
Collector-emitter saturation voltage (VCE(sat)) at IC = 60 A 1.6 V
Total gate charge (Qg) 306 nC
Turn-on delay time (td(on)) 66 ns
Turn-off delay time (td(off)) 210 ns

Key Features

  • High-speed switching series with minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
  • Tight parameter distribution for safe paralleling operation
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Advanced proprietary trench gate field-stop structure

Applications

  • Photovoltaic inverters
  • High-frequency converters
  • Other high-power switching applications requiring high efficiency and reliability

Q & A

  1. What is the maximum collector-emitter voltage of the STGW60H65DFB-4?

    The maximum collector-emitter voltage is 650 V.

  2. What is the continuous collector current at 25 °C and 100 °C?

    The continuous collector current is 80 A at 25 °C and 60 A at 100 °C.

  3. What is the maximum junction temperature of the STGW60H65DFB-4?

    The maximum junction temperature is 175 °C.

  4. What is the thermal resistance junction-case for the IGBT and diode?

    The thermal resistance junction-case is 0.4 °C/W for the IGBT and 1.14 °C/W for the diode.

  5. What is the collector-emitter saturation voltage at 60 A?

    The collector-emitter saturation voltage is 1.6 V (typ.) at IC = 60 A.

  6. What are the typical turn-on and turn-off delay times?

    The typical turn-on delay time is 66 ns, and the typical turn-off delay time is 210 ns.

  7. What are the key applications of the STGW60H65DFB-4?

    The key applications include photovoltaic inverters and high-frequency converters.

  8. What is the significance of the positive VCE(sat) temperature coefficient?

    The positive VCE(sat) temperature coefficient ensures safer paralleling operation due to the tight parameter distribution.

  9. What is the total gate charge of the STGW60H65DFB-4?

    The total gate charge is 306 nC.

  10. What package type is used for the STGW60H65DFB-4?

    The device is packaged in a TO-247 format.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):240 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 60A
Power - Max:375 W
Switching Energy:346µJ (on), 1.161mJ (off)
Input Type:Standard
Gate Charge:306 nC
Td (on/off) @ 25°C:65ns/261ns
Test Condition:400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):60 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-4
Supplier Device Package:TO-247-4
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Similar Products

Part Number STGW60H65DFB-4 STGW80H65DFB-4 STGW40H65DFB-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 80 A 120 A 80 A
Current - Collector Pulsed (Icm) 240 A 240 A 160 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A 2V @ 15V, 80A 2V @ 15V, 40A
Power - Max 375 W 469 W 283 W
Switching Energy 346µJ (on), 1.161mJ (off) 2.1mJ (on), 1.5mJ (off) 200µJ (on), 410µJ (off)
Input Type Standard Standard Standard
Gate Charge 306 nC 414 nC 210 nC
Td (on/off) @ 25°C 65ns/261ns 84ns/280ns 40ns/142ns
Test Condition 400V, 60A, 10Ohm, 15V 400V, 80A, 10Ohm, 15V 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 60 ns 85 ns 62 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-4 TO-247-4 TO-247-4
Supplier Device Package TO-247-4 TO-247-4 TO-247-4

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