Overview
The STGW60H65DFB-4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the HB series, which is designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of frequency converters. This IGBT utilizes an advanced proprietary trench gate field-stop structure, ensuring high-speed switching capabilities and minimized tail current. The device is packaged in a TO-247 format, suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 650 | V |
| Continuous collector current at TC = 25 °C | 80 | A |
| Continuous collector current at TC = 100 °C | 60 | A |
| Pulsed collector current | 240 | A |
| Gate-emitter voltage | ±20 | V |
| Maximum junction temperature (TJ) | 175 | °C |
| Thermal resistance junction-case (RthJC) for IGBT | 0.4 | °C/W |
| Thermal resistance junction-case (RthJC) for diode | 1.14 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 60 A | 1.6 | V |
| Total gate charge (Qg) | 306 | nC |
| Turn-on delay time (td(on)) | 66 | ns |
| Turn-off delay time (td(off)) | 210 | ns |
Key Features
- High-speed switching series with minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameter distribution for safe paralleling operation
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Advanced proprietary trench gate field-stop structure
Applications
- Photovoltaic inverters
- High-frequency converters
- Other high-power switching applications requiring high efficiency and reliability
Q & A
- What is the maximum collector-emitter voltage of the STGW60H65DFB-4?
The maximum collector-emitter voltage is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 80 A at 25 °C and 60 A at 100 °C.
- What is the maximum junction temperature of the STGW60H65DFB-4?
The maximum junction temperature is 175 °C.
- What is the thermal resistance junction-case for the IGBT and diode?
The thermal resistance junction-case is 0.4 °C/W for the IGBT and 1.14 °C/W for the diode.
- What is the collector-emitter saturation voltage at 60 A?
The collector-emitter saturation voltage is 1.6 V (typ.) at IC = 60 A.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time is 66 ns, and the typical turn-off delay time is 210 ns.
- What are the key applications of the STGW60H65DFB-4?
The key applications include photovoltaic inverters and high-frequency converters.
- What is the significance of the positive VCE(sat) temperature coefficient?
The positive VCE(sat) temperature coefficient ensures safer paralleling operation due to the tight parameter distribution.
- What is the total gate charge of the STGW60H65DFB-4?
The total gate charge is 306 nC.
- What package type is used for the STGW60H65DFB-4?
The device is packaged in a TO-247 format.
