Overview
The STGB14NC60KDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the STGB14NC60KD, STGF14NC60KD, and STGP14NC60KD family, which are designed using advanced PowerMESH™ technology. This technology ensures an excellent trade-off between switching performance and low on-state behavior, making the STGB14NC60KDT4 suitable for a variety of high-frequency applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 600 | V |
| Continuous collector current at TC = 25 °C | 14 A | A |
| Continuous collector current at TC = 100 °C | 7 A | A |
| Pulsed collector current | 50 A | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Diode RMS forward current at TC=25°C | 20 A | A |
| Surge non-repetitive forward current (tp = 10 ms sinusoidal) | 55 A | A |
| Total dissipation at TC = 25 °C | 80 W | W |
| Insulation withstand voltage (RMS) from all three leads to external heat sink | 2500 V | V |
| Short-circuit withstand time | 10 μs | μs |
| Storage temperature range | -55 to 150 °C | °C |
| Operating junction temperature range | -55 to 150 °C | °C |
| Thermal resistance junction-case (IGBT) | 1.56 °C/W | °C/W |
| Thermal resistance junction-case (diode) | 2.2 °C/W | °C/W |
| Thermal resistance junction-ambient | 62.5 °C/W | °C/W |
Key Features
- Low On-State Voltage Drop (VCE(sat)): Ensures low power losses during operation.
- Low Cres / Cies Ratio: Reduces susceptibility to cross-conduction.
- Very Soft Ultrafast Recovery Antiparallel Diode: Enhances switching performance and reduces losses.
- Short-Circuit Withstand Time: Up to 10 μs, providing robustness against short-circuit conditions.
- Advanced PowerMESH™ Technology: Optimizes switching performance and low on-state behavior.
Applications
- High Frequency Inverters: Suitable for high-frequency switching applications.
- SMPS and PFC: Applicable in both hard switch and resonant topologies for Switch-Mode Power Supplies (SMPS) and Power Factor Correction (PFC).
- Motor Drives: Ideal for motor drive applications requiring high efficiency and reliability.
Q & A
- What is the collector-emitter voltage rating of the STGB14NC60KDT4?
The collector-emitter voltage (VCE) rating is 600 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 14 A at 25 °C and 7 A at 100 °C.
- What is the short-circuit withstand time of the STGB14NC60KDT4?
The short-circuit withstand time is up to 10 μs.
- What are the key features of the STGB14NC60KDT4?
The key features include low on-state voltage drop, low Cres / Cies ratio, very soft ultrafast recovery antiparallel diode, and short-circuit withstand time.
- In what types of packages is the STGB14NC60KDT4 available?
The device is available in D²PAK (TO-263), TO-220FP, and TO-220 packages.
- What is the thermal resistance junction-case for the IGBT and diode?
The thermal resistance junction-case is 1.56 °C/W for the IGBT and 2.2 °C/W for the diode.
- What are the typical applications of the STGB14NC60KDT4?
The typical applications include high frequency inverters, SMPS and PFC in both hard switch and resonant topologies, and motor drives.
- What is the storage and operating junction temperature range for the STGB14NC60KDT4?
The storage temperature range is -55 to 150 °C, and the operating junction temperature range is also -55 to 150 °C.
- What is the insulation withstand voltage from all three leads to the external heat sink?
The insulation withstand voltage is 2500 V (RMS).
- What technology is used in the development of the STGB14NC60KDT4?
The device is developed using advanced PowerMESH™ technology.
