Overview
The STGF14NC60KD is an Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This three-terminal power semiconductor device is renowned for its high efficiency and fast switching capabilities. The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors, making it an ideal choice for various power management applications.
This device is part of the PowerMESH™ IGBT family, which utilizes advanced high-voltage technology with a patented strip layout to achieve outstanding performance. The 'K' suffix indicates that this family is optimized for high-frequency motor control applications with short-circuit withstand capability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 11 | A |
| Maximum Collector Emitter Voltage | 600 | V |
| Maximum Gate Emitter Voltage | ±20 | V |
| Maximum Power Dissipation | 28 | W |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1 MHz | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 16.4 mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Collector Current (pulsed) | 50 | A |
| Turn-on Delay Time | 22.5 ns | |
| Turn-off Delay Time | 116 ns |
Key Features
- High Efficiency and Fast Switching: Combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
- PowerMESH™ Technology: Utilizes advanced high-voltage technology with a patented strip layout for outstanding performance.
- Short Circuit Ruggedness: Optimized for high-frequency motor control applications with short-circuit withstand capability.
- Low On-Voltage Drop (Vcesat): Ensures lower losses during operation.
- Ultra Fast Recovery Diode: Features a very soft ultra-fast recovery antiparallel diode, reducing switching losses.
- Tight Parameter Distribution: New generation products with tighter parameter distribution for consistent performance.
- Compact Package: Available in the TO-220FP package, suitable for through-hole mounting.
Applications
- High Frequency Inverters: Ideal for applications requiring high-frequency switching.
- SMPS and PFC: Suitable for both hard switch and resonant topologies in Switch-Mode Power Supplies (SMPS) and Power Factor Correction (PFC) circuits.
- Motor Drivers: Used in various motor control applications due to its high current handling and short-circuit ruggedness.
Q & A
- What is the maximum continuous collector current of the STGF14NC60KD IGBT?
The maximum continuous collector current is 11 A at TC = 25°C.
- What is the maximum collector-emitter voltage of the STGF14NC60KD IGBT?
The maximum collector-emitter voltage is 600 V.
- What is the package type of the STGF14NC60KD IGBT?
The package type is TO-220FP.
- What are the key features of the PowerMESH™ IGBT technology used in the STGF14NC60KD?
The key features include lower on-voltage drop, ultra-fast recovery diode, and tighter parameter distribution.
- What are the typical applications of the STGF14NC60KD IGBT?
Typical applications include high-frequency inverters, SMPS and PFC circuits, and motor drivers.
- What is the maximum operating temperature of the STGF14NC60KD IGBT?
The maximum operating temperature is +150 °C.
- What is the switching speed of the STGF14NC60KD IGBT?
The switching speed is up to 1 MHz.
- Does the STGF14NC60KD IGBT have any built-in protection features?
No specific built-in protection features like temperature sensors or thermal cutoff switches are mentioned for this model, but it is designed for short-circuit ruggedness.
- What is the minimum gate threshold voltage of the STGF14NC60KD IGBT?
The minimum gate threshold voltage is 4.5 V.
- What is the maximum power dissipation of the STGF14NC60KD IGBT?
The maximum power dissipation is 28 W.
