STGB20NB41LZT4
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STMicroelectronics STGB20NB41LZT4

Manufacturer No:
STGB20NB41LZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 442V 40A 200W D2PAK
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The STGB20NB41LZT4 is an advanced IGBT (Insulated Gate Bipolar Transistor) designed by STMicroelectronics using the latest high voltage technology based on a patented strip layout. This device is part of the PowerMESH IGBT family, known for its outstanding performance. The STGB20NB41LZT4 features a built-in collector-gate zener for precise active clamping and a gate-emitter zener for ESD protection, making it a robust and reliable choice for various high-power applications.

Key Specifications

Parameter Value
Voltage Rating (Vce) 412 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2 V @ 4.5 V, 20 A
Power - Max 200 W
Package Type D2PAK
Switching Energy Low switching energy

Key Features

  • HIGH VOLTAGE CLAMPING FEATURE: Built-in collector-gate zener for precise active clamping.
  • POLYSILICON GATE VOLTAGE DRIVEN: Ensures stable and efficient operation.
  • LOW ON-VOLTAGE DROP: Minimizes energy losses during operation.
  • LOW THRESHOLD VOLTAGE: Easy to drive with low gate voltage requirements.
  • HIGH CURRENT CAPABILITY: Supports high current applications up to 40 A.
  • LOW GATE CHARGE: Reduces switching losses and improves efficiency.

Applications

The STGB20NB41LZT4 is suitable for a variety of high-power applications, including:

  • Automotive systems: Such as car ignition systems, electric vehicle powertrains, and other high-voltage automotive applications.
  • Industrial power supplies: For high-efficiency and reliable power conversion.
  • Motor control: In applications requiring high current and voltage handling.
  • Power conversion systems: Including DC-DC converters and AC-DC converters.

Q & A

  1. What is the voltage rating of the STGB20NB41LZT4?

    The voltage rating of the STGB20NB41LZT4 is 412 V.

  2. What is the maximum collector current of the STGB20NB41LZT4?

    The maximum collector current is 40 A.

  3. What type of package does the STGB20NB41LZT4 come in?

    The STGB20NB41LZT4 comes in a D2PAK package.

  4. What is the maximum power handling of the STGB20NB41LZT4?

    The maximum power handling is 200 W.

  5. Does the STGB20NB41LZT4 have built-in protection features?

    Yes, it has a built-in collector-gate zener for active clamping and a gate-emitter zener for ESD protection.

  6. What are some typical applications for the STGB20NB41LZT4?

    Typical applications include automotive systems, industrial power supplies, motor control, and power conversion systems.

  7. What is the significance of the PowerMESH technology in the STGB20NB41LZT4?

    The PowerMESH technology enhances the device's performance by providing low on-voltage drop, low threshold voltage, and high current capability.

  8. How does the low gate charge feature benefit the STGB20NB41LZT4?

    The low gate charge reduces switching losses and improves the overall efficiency of the device.

  9. Is the STGB20NB41LZT4 suitable for high-frequency applications?

    Yes, the device is designed to handle high-frequency switching with low switching energy.

  10. Where can I find detailed technical specifications for the STGB20NB41LZT4?

    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through authorized distributors.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):442 V
Current - Collector (Ic) (Max):40 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2V @ 4.5V, 20A
Power - Max:200 W
Switching Energy:5mJ (on), 12.9mJ (off)
Input Type:Standard
Gate Charge:46 nC
Td (on/off) @ 25°C:1µs/12.1µs
Test Condition:320V, 20A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
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