ISL9V5036S3ST
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onsemi ISL9V5036S3ST

Manufacturer No:
ISL9V5036S3ST
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT 390V 46A 250W TO263AB
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The ISL9V5036S3ST is a next-generation Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, designed specifically for automotive ignition applications. This N-Channel IGBT is part of the EcoSPARK® family and is available in the industry-standard D2-Pak (TO-263) package. It is optimized for use in ignition coil driver circuits and coil-on-plug applications, offering superior Self-Clamped Inductive Switching (SCIS) capability. The device features internal diodes that provide voltage clamping, eliminating the need for external components. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards.

Key Specifications

Parameter Symbol Value Unit
Collector to Emitter Breakdown Voltage BVCER 390 V
Emitter to Collector Voltage - Reverse Battery Condition BVECS 24 V
Self-Clamped Inductive Switching Energy at TJ = 25°C ESCIS25 500 mJ
Self-Clamped Inductive Switching Energy at TJ = 150°C ESCIS150 300 mJ
Collector Current Continuous at TC = 25°C IC25 46 A
Collector Current Continuous at TC = 110°C IC110 31 A
Gate to Emitter Voltage Continuous VGEM ±10 V
Power Dissipation Total at TC = 25°C PD 250 W
Operating Junction Temperature Range TJ -40 to 175 °C
Storage Junction Temperature Range TSTG -40 to 175 °C
Max Lead Temperature for Soldering TL 300 °C
Max Package Body Temperature for Soldering Tpkg 260 °C
Electrostatic Discharge Voltage ESD 4 kV

Key Features

  • Industry Standard D2-Pak (TO-263) package
  • Self-Clamped Inductive Switching (SCIS) Energy: 500 mJ at TJ = 25°C and 300 mJ at TJ = 150°C
  • Logic Level Gate Drive
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant
  • Internal diodes provide voltage clamping without the need for external components

Applications

  • Automotive Ignition Coil Driver Circuits
  • Coil-On Plug Applications

Q & A

  1. What is the ISL9V5036S3ST used for?

    The ISL9V5036S3ST is used in automotive ignition circuits, specifically as coil drivers and in coil-on-plug applications.

  2. What package types are available for the ISL9V5036S3ST?

    The device is available in the D2-Pak (TO-263) and TO-220 plastic packages.

  3. What is the maximum collector to emitter breakdown voltage of the ISL9V5036S3ST?

    The maximum collector to emitter breakdown voltage is 390 V.

  4. What is the self-clamped inductive switching energy at 25°C and 150°C?

    The self-clamped inductive switching energy is 500 mJ at 25°C and 300 mJ at 150°C.

  5. Is the ISL9V5036S3ST AEC-Q101 qualified?

    Yes, the ISL9V5036S3ST is AEC-Q101 qualified and PPAP capable.

  6. What is the operating junction temperature range of the ISL9V5036S3ST?

    The operating junction temperature range is -40°C to 175°C.

  7. Does the ISL9V5036S3ST have internal voltage clamping diodes?

    Yes, the device has internal diodes that provide voltage clamping without the need for external components.

  8. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation at TC = 25°C is 250 W.

  9. Is the ISL9V5036S3ST Pb-Free and RoHS compliant?

    Yes, the device is Pb-Free and RoHS compliant.

  10. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):390 V
Current - Collector (Ic) (Max):46 A
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:1.6V @ 4V, 10A
Power - Max:250 W
Switching Energy:- 
Input Type:Logic
Gate Charge:32 nC
Td (on/off) @ 25°C:-/10.8µs
Test Condition:300V, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
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Similar Products

Part Number ISL9V5036S3ST ISL9V3036S3ST ISL9V5036S3S
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Active Obsolete
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 390 V 360 V 390 V
Current - Collector (Ic) (Max) 46 A 21 A 46 A
Current - Collector Pulsed (Icm) - - -
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 10A 1.6V @ 4V, 6A 1.6V @ 4V, 10A
Power - Max 250 W 150 W 250 W
Switching Energy - - -
Input Type Logic Logic Logic
Gate Charge 32 nC 17 nC 32 nC
Td (on/off) @ 25°C -/10.8µs -/4.8µs -/10.8µs
Test Condition 300V, 1kOhm, 5V 300V, 1kOhm, 5V 300V, 1kOhm, 5V
Reverse Recovery Time (trr) - - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) TO-263AB D²PAK (TO-263)

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