IRF9540NPBF
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Infineon Technologies IRF9540NPBF

Manufacturer No:
IRF9540NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET P-CH 100V 23A TO220AB
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF9540NPBF is a 100V single P-Channel Power MOSFET produced by Infineon Technologies. It is packaged in a TO-220AB package, which is an industry standard through-hole power package. This MOSFET is part of the IR MOSFET family, known for utilizing proven silicon processes to offer a wide portfolio of devices for various applications. The device is optimized for broad availability from distribution partners and is qualified according to JEDEC standards.

Key Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -19 A
Pulsed Drain Current IDM -72 A
Drain-Source On Resistance RDS(on) 0.20 Ω
Total Gate Charge Qg 61 nC
Gate-Source Charge Qgs 14 nC
Gate-Drain Charge Qgd 29 nC
Operating Junction Temperature TJ -55 to +175 °C
Maximum Power Dissipation PD 150 W

Key Features

  • Planar Cell Structure: Offers a wide Safe Operating Area (SOA).
  • High-Current Rating: Supports high current applications with a continuous drain current of -19 A.
  • Industry Standard Package: Available in the TO-220AB package, making it easy to integrate into existing designs.
  • Optimized for Low Frequency Applications: Silicon is optimized for applications switching below 100 kHz.
  • Increased Ruggedness: Provides high performance and reliability in various operating conditions.
  • Wide Availability: Optimized for broadest availability from distribution partners.
  • JEDEC Standard Qualification: Ensures compliance with industry standards for reliability and performance).

Applications

The IRF9540NPBF is suitable for a variety of applications, including:

  • DC Motors: Used in motor control circuits for efficient and reliable operation.
  • Inverters and SMPS: Ideal for power conversion applications due to its high current rating and low on-resistance).
  • Lighting: Used in lighting control circuits, especially in high-power LED lighting systems).
  • Load Switches: Can be used as a high-current switch in load management applications).
  • Battery Powered Applications: Suitable for use in battery-powered devices requiring high current handling).

Q & A

  1. What is the maximum drain-source voltage of the IRF9540NPBF?

    The maximum drain-source voltage (VDS) is -100 V).

  2. What is the continuous drain current rating of the IRF9540NPBF?

    The continuous drain current (ID) is -19 A).

  3. What is the on-resistance (RDS(on)) of the IRF9540NPBF?

    The on-resistance (RDS(on)) is 0.20 Ω when VGS is -10 V and ID is -11 A).

  4. What is the operating junction temperature range of the IRF9540NPBF?

    The operating junction temperature range is -55 to +175 °C).

  5. What package type is the IRF9540NPBF available in?

    The IRF9540NPBF is available in the TO-220AB package).

  6. Is the IRF9540NPBF lead-free and halogen-free?
  7. What are some typical applications of the IRF9540NPBF?
  8. What is the maximum power dissipation of the IRF9540NPBF?
  9. What is the total gate charge (Qg) of the IRF9540NPBF?
  10. Is the IRF9540NPBF qualified according to JEDEC standards?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:117mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:97 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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In Stock

$1.53
499

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Similar Products

Part Number IRF9540NPBF IRF9540PBF IRF9540SPBF IRF9540NSPBF IRF9520NPBF IRF9530NPBF IRF9540NLPBF
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Discontinued at Digi-Key Last Time Buy Active Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 19A (Tc) 19A (Tc) 23A (Tc) 6.8A (Tc) 14A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V - 10V 10V
Rds On (Max) @ Id, Vgs 117mOhm @ 11A, 10V 200mOhm @ 11A, 10V 200mOhm @ 11A, 10V 117mOhm @ 14A, 10V 480mOhm @ 4A, 10V 200mOhm @ 8.4A, 10V 117mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 97 nC @ 10 V 61 nC @ 10 V 61 nC @ 10 V 110 nC @ 10 V 27 nC @ 10 V 58 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 1400 pF @ 25 V 1400 pF @ 25 V 1450 pF @ 25 V 350 pF @ 25 V 760 pF @ 25 V 1450 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 140W (Tc) 150W (Tc) 3.7W (Ta), 150W (Tc) 3.1W (Ta), 110W (Tc) - 79W (Tc) 3.1W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB D²PAK (TO-263) D2PAK TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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