BFR93AE6327HTSA1
  • Share:

Infineon Technologies BFR93AE6327HTSA1

Manufacturer No:
BFR93AE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 6GHZ SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFR93AE6327HTSA1 is an NPN silicon RF transistor produced by Infineon Technologies. This component is designed for high-frequency amplification and is particularly suited for low-noise, high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, making it versatile for various RF applications. The transistor is packaged in a Pb-free (RoHS compliant) SOT23 package, ensuring environmental compliance and reliability.

Key Specifications

Specification Value
Type NPN Silicon RF Transistor
Package SOT23 (Surface Mount PG-SOT23)
Collector Current Up to 90 mA
Collector-Emitter Voltage 12 V
Frequency Range Up to 6 GHz
Power Dissipation 300 mW
Environmental Compliance Pb-free (RoHS compliant)

Key Features

  • High gain and low noise operation, making it ideal for broadband amplifiers.
  • Operates at collector currents from 2 mA to 30 mA, offering flexibility in various applications.
  • Pb-free (RoHS compliant) package, ensuring environmental sustainability and compliance.
  • Surface mount SOT23 package for easy integration into modern RF circuits.

Applications

  • Wireless Communications: Suitable for cellular and cordless phones, DECT, and other wireless communication devices.
  • Low Noise Amplifiers (LNAs) in RF Front-end: Ideal for applications requiring high gain and low noise.
  • Tuners, FM, and RF Modems: Used in various RF applications requiring high-frequency amplification.

Q & A

  1. What type of transistor is the BFR93AE6327HTSA1?

    The BFR93AE6327HTSA1 is an NPN silicon RF transistor.

  2. What is the package type of the BFR93AE6327HTSA1?

    The transistor is packaged in a SOT23 (Surface Mount PG-SOT23) package.

  3. What is the maximum collector current of the BFR93AE6327HTSA1?

    The maximum collector current is up to 90 mA.

  4. What is the frequency range of the BFR93AE6327HTSA1?

    The transistor operates up to a frequency range of 6 GHz.

  5. Is the BFR93AE6327HTSA1 environmentally compliant?

    Yes, it is Pb-free (RoHS compliant).

  6. What are some common applications of the BFR93AE6327HTSA1?

    Common applications include wireless communications, LNAs in RF front-end, tuners, FM, and RF modems.

  7. What is the power dissipation of the BFR93AE6327HTSA1?

    The power dissipation is 300 mW.

  8. What is the collector-emitter voltage of the BFR93AE6327HTSA1?

    The collector-emitter voltage is 12 V.

  9. Why is the BFR93AE6327HTSA1 suitable for broadband amplifiers?

    It is suitable due to its high gain and low noise operation.

  10. Where can I purchase the BFR93AE6327HTSA1?

    You can purchase it from various electronics distributors such as Digi-Key, Mouser Electronics, and EG.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:6GHz
Noise Figure (dB Typ @ f):1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:9.5dB ~ 14.5dB
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
Current - Collector (Ic) (Max):90mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.47
1,366

Please send RFQ , we will respond immediately.

Related Product By Categories

BFU550R
BFU550R
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFU520XRR
BFU520XRR
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143R
BFR93AWE6327
BFR93AWE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
MX0912B351Y
MX0912B351Y
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
BFU668F,115
BFU668F,115
NXP USA Inc.
TRANSISTOR NPN SOT343F
BFU530WF
BFU530WF
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT323-3
BFG505/X,235
BFG505/X,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFG135,115
BFG135,115
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT223
BFQ591,115
BFQ591,115
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT89-3
BFM505,115
BFM505,115
NXP USA Inc.
RF TRANS 2 NPN 8V 9GHZ 6TSSOP
BLT81,115
BLT81,115
NXP USA Inc.
RF TRANS NPN 9.5V 900MHZ SOT223
BFU725F,115
BFU725F,115
NXP USA Inc.
RF TRANS NPN 2.8V 70GHZ 4DFP

Related Product By Brand

BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC848B-E6327
BC848B-E6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC 807-25 E6327
BC 807-25 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
XDPE12284C0000XUMA1
XDPE12284C0000XUMA1
Infineon Technologies
IC REG LINEAR VOLTAGE NEG