BFU520X215
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NXP USA Inc. BFU520X215

Manufacturer No:
BFU520X215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NPN RF TRANSISTOR
Delivery:
Payment:
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Product Introduction

Overview

The BFU520X215, produced by NXP USA Inc., is a high-performance NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors, which are suitable for small signal to medium power applications up to 2 GHz. This transistor is particularly useful in various RF and microwave circuits where low noise and high reliability are critical.

Key Specifications

Category Specification
Manufacturer NXP USA Inc.
Series Automotive, AEC-Q101
Package / Case TO-253-4, TO-253AA, SOT-143B
Transistor Type NPN
Operating Temperature -40°C ~ 150°C (TJ)
Frequency - Transition 10.5 GHz
Noise Figure (dB Typ @ f) 0.65 dB @ 900 MHz
Current - Collector (Ic) (Max) 30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5 mA, 8 V
Voltage - Collector Emitter Breakdown (Max) 12 V
Power - Max 450 mW
Mounting Type Surface Mount

Key Features

  • Low noise figure: Minimum noise figure (NF min) = 0.65 dB at 900 MHz, making it suitable for high-sensitivity applications.
  • High breakdown voltage: Maximum collector-emitter breakdown voltage of 12 V.
  • High gain: Maximum stable gain of 19 dB at 900 MHz.
  • AEC-Q101 qualified: Ensures reliability and performance in automotive and other demanding environments.
  • Wide frequency range: Suitable for applications up to 2 GHz.
  • High-speed operation: Transition frequency of 10.5 GHz.

Applications

  • RF and microwave circuits: Suitable for small signal to medium power applications in various RF and microwave systems.
  • Automotive systems: AEC-Q101 qualified, making it reliable for use in automotive electronics.
  • Wireless communication systems: Used in wireless communication equipment due to its low noise and high gain characteristics.
  • Radar and navigation systems: High-speed and low-noise performance makes it suitable for radar and navigation applications.

Q & A

  1. What is the BFU520X215 transistor used for?

    The BFU520X215 is used in high-speed, low-noise RF applications, including RF and microwave circuits, automotive systems, and wireless communication systems.

  2. What is the maximum operating temperature of the BFU520X215?

    The maximum operating temperature (TJ) is 150°C.

  3. What is the noise figure of the BFU520X215 at 900 MHz?

    The noise figure at 900 MHz is typically 0.65 dB.

  4. What is the maximum collector current of the BFU520X215?

    The maximum collector current (Ic) is 30 mA.

  5. Is the BFU520X215 AEC-Q101 qualified?
  6. What is the transition frequency of the BFU520X215?

    The transition frequency is 10.5 GHz.

  7. What is the maximum power handling of the BFU520X215?

    The maximum power handling is 450 mW.

  8. What package types are available for the BFU520X215?

    The BFU520X215 is available in TO-253-4, TO-253AA, and SOT-143B packages.

  9. What is the DC current gain (hFE) of the BFU520X215?

    The DC current gain (hFE) is minimum 60 at 5 mA and 8 V.

  10. What are the typical applications of the BFU520X215 in wireless communication systems?

    The BFU520X215 is used in various wireless communication equipment due to its low noise and high gain characteristics.

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Part Number BFU520X215 BFU520X235
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Voltage - Collector Emitter Breakdown (Max) - -
Frequency - Transition - -
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Current - Collector (Ic) (Max) - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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