BFU520X235
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NXP USA Inc. BFU520X235

Manufacturer No:
BFU520X235
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NPN RF TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU520X235 is an NPN RF transistor manufactured by NXP USA Inc. This transistor is designed for high-speed, low-noise applications, making it suitable for a variety of radio frequency (RF) uses. It is part of the BFU5 family of transistors, known for their performance in small signal to medium power applications up to 2 GHz.

Key Specifications

ParameterConditionsMinTypMaxUnit
Collector-Base Voltage (VCB)Open Emitter--24V
Collector-Emitter Voltage (VCE)Open Base--12V
Emitter-Base Voltage (VEB)Open Collector--2V
Collector Current (IC)---30mA
Total Power Dissipation (Ptot)Tsp ≤ 87°C--450mW
DC Current Gain (hFE)IC = 5 mA; VCE = 8 V6095200-
Transition Frequency (fT)IC = 10 mA; VCE = 8 V; f = 900 MHz-10-GHz
Noise Figure (NFmin)f = 900 MHz; VCE = 8 V-0.65-dB

Key Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified, suitable for automotive applications
  • High transition frequency (fT) of up to 10.5 GHz
  • Minimum noise figure (NFmin) of 0.65 dB at 900 MHz
  • Maximum stable gain of 19 dB at 900 MHz
  • High supply voltage and high breakdown voltage capabilities

Applications

  • Broadband differential amplifiers up to 2 GHz
  • Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
  • ISM band oscillators
  • Applications requiring high supply voltages and high breakdown voltages
  • Satellite TV tuners, cellular phones, cordless phones, and pagers

Q & A

  1. What is the BFU520X235 transistor used for? The BFU520X235 is used for high-speed, low-noise RF applications.
  2. What is the maximum collector current of the BFU520X235? The maximum collector current is 30 mA.
  3. What is the typical noise figure of the BFU520X235 at 900 MHz? The typical noise figure is 0.65 dB.
  4. What is the transition frequency of the BFU520X235? The transition frequency is up to 10.5 GHz.
  5. Is the BFU520X235 AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  6. What are the typical applications of the BFU520X235? Typical applications include broadband differential amplifiers, low noise amplifiers for ISM applications, and ISM band oscillators.
  7. What is the maximum total power dissipation of the BFU520X235? The maximum total power dissipation is 450 mW.
  8. What is the DC current gain (hFE) of the BFU520X235? The DC current gain (hFE) is between 60 and 200 at IC = 5 mA and VCE = 8 V.
  9. What is the operating temperature range of the BFU520X235? The operating temperature range is from -40°C to 150°C.
  10. What package types are available for the BFU520X235? The transistor is available in a plastic, 4-pin dual-emitter SOT143B package.

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BFU520X235 BFU520235 BFU520X215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Frequency - Transition - - -
Noise Figure (dB Typ @ f) - - -
Gain - - -
Power - Max - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - -
Current - Collector (Ic) (Max) - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

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