Overview
The BFS17TA is an NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for high-frequency applications, particularly in the ultra-high frequency band. It is known for its high nominal transition frequency, making it suitable for various RF and microwave applications. The BFS17TA is packaged in a SOT-23-3 (TO-236-3, SC-59) package, which is compact and ideal for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer Part # | BFS17TA |
| Manufacturer | Diodes Incorporated |
| Transistor Type | NPN Bipolar Junction Transistor |
| Package | SOT-23-3, TO-236-3, SC-59 |
| Nominal Transition Frequency (fT) | 1300 MHz |
| Maximum Collector-Emitter Breakdown Voltage (Vceo) | 15 V |
| DC Current Gain (hFE) (Min) @ Ic | 100 (typical at Ic = 10 mA) |
Key Features
- High Frequency Capability: The BFS17TA has a nominal transition frequency of 1300 MHz, making it suitable for high-frequency and RF applications.
- Compact Packaging: Available in the SOT-23-3 package, which is ideal for space-constrained designs.
- Reliable Performance: Offers a high DC current gain (hFE) and a maximum collector-emitter breakdown voltage of 15 V.
Applications
- RF and Microwave Circuits: Suitable for use in ultra-high frequency band applications such as RF amplifiers, oscillators, and switches.
- Wireless Communication Systems: Can be used in wireless communication systems, including mobile handsets and base stations.
- Industrial and Automotive Systems: Applicable in various industrial and automotive systems requiring high-frequency signal processing.
Q & A
- What is the BFS17TA transistor?
The BFS17TA is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for high-frequency applications. - What is the nominal transition frequency of the BFS17TA?
The nominal transition frequency of the BFS17TA is 1300 MHz. - What package types are available for the BFS17TA?
The BFS17TA is available in SOT-23-3, TO-236-3, and SC-59 packages. - What is the maximum collector-emitter breakdown voltage of the BFS17TA?
The maximum collector-emitter breakdown voltage of the BFS17TA is 15 V. - What are the typical applications of the BFS17TA?
The BFS17TA is typically used in RF and microwave circuits, wireless communication systems, and industrial and automotive systems. - What is the DC current gain (hFE) of the BFS17TA?
The DC current gain (hFE) of the BFS17TA is typically 100 at Ic = 10 mA. - Why is the SOT-23-3 package beneficial?
The SOT-23-3 package is beneficial due to its compact size, making it ideal for space-constrained designs. - Who manufactures the BFS17TA transistor?
The BFS17TA transistor is manufactured by Diodes Incorporated. - What are some common uses of the BFS17TA in wireless communication systems?
The BFS17TA can be used in mobile handsets and base stations within wireless communication systems. - Is the BFS17TA suitable for industrial applications?
Yes, the BFS17TA is suitable for various industrial applications requiring high-frequency signal processing.
