BFS17HTC
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Diodes Incorporated BFS17HTC

Manufacturer No:
BFS17HTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.3GHZ SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BFS17HTC is a Bipolar RF Transistor manufactured by Diodes Incorporated. This component is designed for RF applications and is characterized by its high-frequency performance and low noise figure. Although the BFS17HTC is currently listed as obsolete, it remains relevant for understanding the capabilities and specifications of similar RF transistors.

Key Specifications

ParameterValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition1.3GHz
Current - Collector (Ic) (Max)25mA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA, 1V
Noise Figure (dB Typ @ f)4.5dB @ 500MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Power - Max330mW

Key Features

  • High-frequency transition of 1.3GHz, making it suitable for RF applications.
  • Low noise figure of 4.5dB at 500MHz, which is crucial for maintaining signal integrity.
  • Surface mount package (SOT-23-3) for compact and efficient design.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in various environments.
  • Maximum collector current of 25mA and maximum power dissipation of 330mW.

Applications

The BFS17HTC is designed for use in RF circuits, particularly in applications requiring high-frequency performance and low noise. This includes:

  • RF amplifiers and receivers.
  • Wireless communication systems.
  • Radio frequency identification (RFID) systems.
  • Other high-frequency electronic devices where signal integrity and low noise are critical.

Q & A

  1. What is the transistor type of the BFS17HTC?
    The BFS17HTC is an NPN Bipolar RF Transistor.
  2. What is the maximum collector-emitter breakdown voltage of the BFS17HTC?
    The maximum collector-emitter breakdown voltage is 15V.
  3. What is the transition frequency of the BFS17HTC?
    The transition frequency is 1.3GHz.
  4. What is the maximum collector current of the BFS17HTC?
    The maximum collector current is 25mA.
  5. What is the noise figure of the BFS17HTC at 500MHz?
    The noise figure is 4.5dB at 500MHz.
  6. What is the operating temperature range of the BFS17HTC?
    The operating temperature range is from -55°C to 150°C (TJ).
  7. What package types are available for the BFS17HTC?
    The BFS17HTC is available in TO-236-3, SC-59, and SOT-23-3 packages.
  8. Is the BFS17HTC still in production?
    No, the BFS17HTC is currently listed as obsolete.
  9. What are some common applications of the BFS17HTC?
    Common applications include RF amplifiers, receivers, wireless communication systems, and RFID systems.
  10. What is the maximum power dissipation of the BFS17HTC?
    The maximum power dissipation is 330mW.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.3GHz
Noise Figure (dB Typ @ f):4.5dB @ 500MHz
Gain:- 
Power - Max:330mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Same Series
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Similar Products

Part Number BFS17HTC BFS17HTA
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 1.3GHz 1.3GHz
Noise Figure (dB Typ @ f) 4.5dB @ 500MHz 4.5dB @ 500MHz
Gain - -
Power - Max 330mW 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 1V 70 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

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