BFS17HTC
  • Share:

Diodes Incorporated BFS17HTC

Manufacturer No:
BFS17HTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 1.3GHZ SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFS17HTC is a Bipolar RF Transistor manufactured by Diodes Incorporated. This component is designed for RF applications and is characterized by its high-frequency performance and low noise figure. Although the BFS17HTC is currently listed as obsolete, it remains relevant for understanding the capabilities and specifications of similar RF transistors.

Key Specifications

ParameterValue
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition1.3GHz
Current - Collector (Ic) (Max)25mA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA, 1V
Noise Figure (dB Typ @ f)4.5dB @ 500MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Power - Max330mW

Key Features

  • High-frequency transition of 1.3GHz, making it suitable for RF applications.
  • Low noise figure of 4.5dB at 500MHz, which is crucial for maintaining signal integrity.
  • Surface mount package (SOT-23-3) for compact and efficient design.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in various environments.
  • Maximum collector current of 25mA and maximum power dissipation of 330mW.

Applications

The BFS17HTC is designed for use in RF circuits, particularly in applications requiring high-frequency performance and low noise. This includes:

  • RF amplifiers and receivers.
  • Wireless communication systems.
  • Radio frequency identification (RFID) systems.
  • Other high-frequency electronic devices where signal integrity and low noise are critical.

Q & A

  1. What is the transistor type of the BFS17HTC?
    The BFS17HTC is an NPN Bipolar RF Transistor.
  2. What is the maximum collector-emitter breakdown voltage of the BFS17HTC?
    The maximum collector-emitter breakdown voltage is 15V.
  3. What is the transition frequency of the BFS17HTC?
    The transition frequency is 1.3GHz.
  4. What is the maximum collector current of the BFS17HTC?
    The maximum collector current is 25mA.
  5. What is the noise figure of the BFS17HTC at 500MHz?
    The noise figure is 4.5dB at 500MHz.
  6. What is the operating temperature range of the BFS17HTC?
    The operating temperature range is from -55°C to 150°C (TJ).
  7. What package types are available for the BFS17HTC?
    The BFS17HTC is available in TO-236-3, SC-59, and SOT-23-3 packages.
  8. Is the BFS17HTC still in production?
    No, the BFS17HTC is currently listed as obsolete.
  9. What are some common applications of the BFS17HTC?
    Common applications include RF amplifiers, receivers, wireless communication systems, and RFID systems.
  10. What is the maximum power dissipation of the BFS17HTC?
    The maximum power dissipation is 330mW.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:1.3GHz
Noise Figure (dB Typ @ f):4.5dB @ 500MHz
Gain:- 
Power - Max:330mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2mA, 1V
Current - Collector (Ic) (Max):25mA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

-
41

Please send RFQ , we will respond immediately.

Same Series
BFS17TA
BFS17TA
RF TRANS NPN 15V 1.3GHZ SOT23-3
BFS17HTC
BFS17HTC
RF TRANS NPN 15V 1.3GHZ SOT23-3

Similar Products

Part Number BFS17HTC BFS17HTA
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 1.3GHz 1.3GHz
Noise Figure (dB Typ @ f) 4.5dB @ 500MHz 4.5dB @ 500MHz
Gain - -
Power - Max 330mW 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 1V 70 @ 2mA, 1V
Current - Collector (Ic) (Max) 25mA 25mA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

Related Product By Categories

BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BFU580QX
BFU580QX
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT89-3
BFU550XVL
BFU550XVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFR93AR,215
BFR93AR,215
NXP USA Inc.
RF TRANS NPN 12V 6GHZ TO236AB
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFT25A,215
BFT25A,215
NXP USA Inc.
RF TRANS NPN 5V 5GHZ TO236AB
BFT92,215
BFT92,215
NXP USA Inc.
RF TRANS PNP 15V 5GHZ TO236AB
BFS520,115
BFS520,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT323-3
BFG21W,115
BFG21W,115
NXP USA Inc.
RF TRANS NPN 4.5V 18GHZ CMPAK-4
BFG540W/XR,135
BFG540W/XR,135
NXP USA Inc.
RF TRANS NPN 15V 9GHZ CMPAK-4
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3
BFR92A,215
BFR92A,215
NXP USA Inc.
RF TRANS NPN 15V 5GHZ TO236AB

Related Product By Brand

BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAW56WQ-7-F
BAW56WQ-7-F
Diodes Incorporated
FAST SWITCHING DIODE SOT323 T&R
BAS70-04T-7-F
BAS70-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
BZX84C15W-7-F
BZX84C15W-7-F
Diodes Incorporated
DIODE ZENER 15V 200MW SOT323
BZX84C3V9Q-7-F
BZX84C3V9Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84B3V6Q-7-F
BZX84B3V6Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BZX84C36-7-G
BZX84C36-7-G
Diodes Incorporated
DIODE ZENER
BZX84C16-7-F-31
BZX84C16-7-F-31
Diodes Incorporated
DIODE ZENER 16V 300MW SOT23
BCV49TA
BCV49TA
Diodes Incorporated
TRANS NPN DARL 60V 0.5A SOT89-3
2N7002T-13-G
2N7002T-13-G
Diodes Incorporated
MOSFET N-CH 60V SOT523
74LVC1G07FW5-7
74LVC1G07FW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN