BFU550AR
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NXP USA Inc. BFU550AR

Manufacturer No:
BFU550AR
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BFU550AR is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors produced by NXP USA Inc. This transistor is packaged in a TO236AB (SOT23) package, making it suitable for a variety of radio frequency (RF) applications where compact size and high performance are critical.

Key Specifications

ParameterValue
Transistor TypeNPN
Package TypeTO236AB (SOT23)
Maximum Collector-Emitter Voltage12 V
Maximum Collector Current50 mA
Maximum Power Dissipation450 mW
Frequency RangeUp to 11 GHz

Key Features

  • High-speed operation suitable for RF applications
  • Low noise characteristics for improved signal integrity
  • Compact TO236AB (SOT23) package for space-efficient designs
  • Maximum collector-emitter voltage of 12 V and maximum collector current of 50 mA
  • Maximum power dissipation of 450 mW

Applications

The BFU550AR is ideal for various RF applications, including:

  • Wireless communication systems
  • Radio transceivers
  • RF amplifiers and switches
  • Radar systems
  • Aerospace and defense electronics

Q & A

  1. What is the package type of the BFU550AR? The BFU550AR is packaged in a TO236AB (SOT23) package.
  2. What is the maximum collector-emitter voltage of the BFU550AR? The maximum collector-emitter voltage is 12 V.
  3. What is the maximum collector current of the BFU550AR? The maximum collector current is 50 mA.
  4. What is the frequency range of the BFU550AR? The BFU550AR operates up to 11 GHz.
  5. What are the key features of the BFU550AR? High-speed operation, low noise characteristics, and a compact package.
  6. What are some typical applications of the BFU550AR? Wireless communication systems, radio transceivers, RF amplifiers and switches, radar systems, and aerospace and defense electronics.
  7. What is the maximum power dissipation of the BFU550AR? The maximum power dissipation is 450 mW.
  8. Is the BFU550AR suitable for high-speed applications? Yes, it is designed for high-speed, low-noise applications.
  9. Who is the manufacturer of the BFU550AR? NXP USA Inc.
  10. What family of transistors does the BFU550AR belong to? The BFU550AR belongs to the BFU5 family of transistors.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):0.6dB @ 900MHz
Gain:18dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 15mA, 8V
Current - Collector (Ic) (Max):50mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Same Series
BFU550AVL
BFU550AVL
RF TRANS NPN 12V 11GHZ TO236AB

Similar Products

Part Number BFU550AR BFU550R BFU550XAR BFU520AR BFU530AR
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V 12V 12V
Frequency - Transition 11GHz 11GHz 11GHz 10GHz 11GHz
Noise Figure (dB Typ @ f) 0.6dB @ 900MHz 0.7dB @ 900MHz 0.75db @ 900MHz 0.7dB @ 900MHz 0.6dB @ 900MHz
Gain 18dB 21dB 21.5dB 18dB 18dB
Power - Max 450mW 450mW 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 8V 60 @ 15mA, 8V 60 @ 15mA, 8V 60 @ 5mA, 8V 60 @ 10mA, 8V
Current - Collector (Ic) (Max) 50mA 50mA 50mA 30mA 40mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-253-4, TO-253AA TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-143B SOT-143B SOT-23 (TO-236AB) SOT-23 (TO-236AB)

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