Overview
The BFR93AW,135 is a silicon NPN bipolar junction transistor (BJT) produced by NXP USA Inc. This transistor is encapsulated in a plastic SOT323 (S-mini) package and is designed for high-frequency applications. It is part of the BFR93 series, which includes transistors known for their high power gain and reliability. The BFR93AW,135 is particularly suited for use in RF amplifiers, mixers, and oscillators with signal frequencies up to 1 GHz.
Key Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open Emitter | - | - | 15 | V |
| Collector-Emitter Voltage (VCEO) | Open Base | - | - | 12 | V |
| Emitter-Base Voltage (VEBO) | Open Collector | - | - | 2 | V |
| Collector Current (IC) | - | - | - | 35 | mA |
| Total Power Dissipation (Ptot) | - | - | - | 300 | mW |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| DC Current Gain (hFE) | IC = 30 mA; VCE = 5 V | 40 | 90 | - | - |
Key Features
- High power gain, making it suitable for RF amplification.
- Gold metallization ensures excellent reliability.
- Encapsulated in a plastic SOT323 (S-mini) package, which is compact and space-saving.
- Low collector leakage current and low saturation voltage.
- High current gain and low feedback capacitance.
Applications
The BFR93AW,135 is designed for use in various high-frequency applications, including:
- RF amplifiers.
- Mixers.
- Oscillators with signal frequencies up to 1 GHz.
Q & A
- What is the package type of the BFR93AW,135 transistor?
The BFR93AW,135 is packaged in a plastic SOT323 (S-mini) package. - What are the maximum collector-emitter and collector-base voltages?
The maximum collector-emitter voltage (VCEO) is 12 V, and the maximum collector-base voltage (VCBO) is 15 V. - What is the maximum collector current (IC) for the BFR93AW,135?
The maximum collector current (IC) is 35 mA. - What is the total power dissipation (Ptot) of the transistor?
The total power dissipation (Ptot) is 300 mW. - What are the typical applications of the BFR93AW,135 transistor?
The transistor is typically used in RF amplifiers, mixers, and oscillators with signal frequencies up to 1 GHz. - Is the BFR93AW,135 still in production?
No, the BFR93AW,135 is no longer manufactured. - What is the DC current gain (hFE) of the transistor?
The DC current gain (hFE) is typically 90, with a minimum of 40, at IC = 30 mA and VCE = 5 V. - What is the storage temperature range for the BFR93AW,135?
The storage temperature range is from -65°C to 150°C. - What is the junction temperature limit for the transistor?
The junction temperature limit is 150°C. - Where can I find the datasheet for the BFR93AW,135?
The datasheet can be found on the NXP Semiconductors website or through distributors like Xecor and Octopart.
