BFG520,235
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NXP USA Inc. BFG520,235

Manufacturer No:
BFG520,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 15V 9GHZ SOT143B
Delivery:
Payment:
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Product Introduction

Overview

The BFG520,235 is an NPN 9 GHz wideband transistor manufactured by NXP USA Inc. This transistor is designed for high-frequency applications, particularly in the RF frontend of various devices. It is encapsulated in a 4-pin, dual-emitter plastic SOT143B package, ensuring compact and reliable performance.

Key Specifications

Parameter Conditions Min. Typ. Max. Unit
VCBO (Collector-Base Voltage) Open Emitter - - 20 V
VCEO (Collector-Emitter Voltage) Open Base - - 15 V
Ic (DC Collector Current) - - - 70 mA
Ptot (Total Power Dissipation) Up to Ts = 88 °C - - 300 mW
hFE (DC Current Gain) IC = 20 mA; VCE = 6 V; Tj = 25 °C 60 120 250 -
fT (Transition Frequency) IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C - - 9 GHz
Noise Figure (Typ @ f) f = 900 MHz - 1.1 ~ 2.1 - dB
Operating Temperature (Tj) - - - 175 °C
Package - - - SOT143B -

Key Features

  • High power gain
  • Low noise figure
  • High transition frequency of up to 9 GHz
  • Gold metallization for excellent reliability
  • Compact 4-pin, dual-emitter plastic SOT143B package

Applications

The BFG520,235 is intended for various high-frequency applications, including:

  • Analog and digital cellular telephones
  • Cordless telephones (CT1, CT2, DECT, etc.)
  • Radar detectors
  • Pagers
  • Satellite TV tuners (SATV)
  • Repeater amplifiers in fibre-optic systems

Q & A

  1. What is the maximum collector-emitter voltage of the BFG520,235?

    The maximum collector-emitter voltage (VCEO) is 15 V.

  2. What is the transition frequency of the BFG520,235?

    The transition frequency (fT) is up to 9 GHz.

  3. What is the typical noise figure at 900 MHz?

    The typical noise figure at 900 MHz is between 1.1 dB and 2.1 dB.

  4. What is the maximum DC collector current?

    The maximum DC collector current (Ic) is 70 mA.

  5. What is the operating temperature range of the BFG520,235?

    The operating temperature (Tj) is up to 175 °C.

  6. In what package is the BFG520,235 encapsulated?

    The BFG520,235 is encapsulated in a 4-pin, dual-emitter plastic SOT143B package.

  7. What are some common applications of the BFG520,235?

    Common applications include analog and digital cellular telephones, cordless telephones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers in fibre-optic systems.

  8. Is the BFG520,235 RoHS compliant?

    Yes, the BFG520,235 is RoHS compliant and lead-free.

  9. What is the maximum total power dissipation of the BFG520,235?

    The maximum total power dissipation (Ptot) is 300 mW up to Ts = 88 °C.

  10. What is the DC current gain (hFE) of the BFG520,235?

    The DC current gain (hFE) is between 60 and 250 at IC = 20 mA and VCE = 6 V.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:9GHz
Noise Figure (dB Typ @ f):1.1dB ~ 2.1dB @ 900MHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 20mA, 6V
Current - Collector (Ic) (Max):70mA
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:SOT-143B
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Same Series
BFG520/X,235
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BFG520/XR,235
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BFG520/XR,215
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Similar Products

Part Number BFG520,235 BFG520,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 9GHz 9GHz
Noise Figure (dB Typ @ f) 1.1dB ~ 2.1dB @ 900MHz 1.1dB ~ 2.1dB @ 900MHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA, 6V 60 @ 20mA, 6V
Current - Collector (Ic) (Max) 70mA 70mA
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-253-4, TO-253AA TO-253-4, TO-253AA
Supplier Device Package SOT-143B SOT-143B

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