BFU550215
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NXP USA Inc. BFU550215

Manufacturer No:
BFU550215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NPN RF TRANSISTOR
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BFU550215 is an NPN silicon RF transistor manufactured by NXP USA Inc. This component is designed for high-speed, low-noise applications, making it suitable for various radio frequency (RF) and microwave systems. The transistor is packaged in a plastic, 4-pin dual-emitter SOT143B package, which is surface mountable, enhancing its usability in modern electronic designs.

Key Specifications

Category Specification
Manufacturer NXP USA Inc.
Transistor Type NPN RF Transistor
Package / Case SOT-143R
Mounting Type Surface Mount
Operating Temperature -40°C ~ 150°C (TJ)
Frequency - Transition 11 GHz
Noise Figure (dB Typ @ f) 1.25 dB @ 1.8 GHz
Gain 15.5 dB
Power - Max 450 mW
Current - Collector (Ic) (Max) 50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15 mA, 8 V
Voltage - Collector Emitter Breakdown (Max) 12 V

Key Features

  • High-speed operation with a transition frequency of 11 GHz.
  • Low noise figure of 1.25 dB at 1.8 GHz, making it suitable for high-sensitivity applications.
  • High gain of 15.5 dB, enhancing signal strength in RF circuits.
  • Maximum power handling of 450 mW, suitable for a variety of RF power applications.
  • Surface mount SOT-143R package for easy integration into modern PCB designs.
  • Wide operating temperature range from -40°C to 150°C, ensuring reliability in diverse environments.

Applications

  • Radio Frequency (RF) and microwave systems.
  • Communication infrastructure, including base stations and repeaters.
  • Automotive electronics, such as radar and communication systems.
  • Industrial and IoT applications requiring high-speed, low-noise RF components.
  • Mobile and personal communication devices, such as mobile phones and personal media players.

Q & A

  1. What is the BFU550215 transistor used for?

    The BFU550215 is used in high-speed, low-noise RF applications, including communication infrastructure, automotive electronics, and industrial IoT devices.

  2. What is the package type of the BFU550215?

    The BFU550215 is packaged in a surface mount SOT-143R package.

  3. What is the maximum operating temperature of the BFU550215?

    The maximum operating temperature (TJ) is 150°C, with a range from -40°C to 150°C.

  4. What is the noise figure of the BFU550215 at 1.8 GHz?

    The noise figure at 1.8 GHz is 1.25 dB.

  5. What is the maximum power handling of the BFU550215?

    The maximum power handling is 450 mW.

  6. What is the DC current gain (hFE) of the BFU550215?

    The DC current gain (hFE) is 60 at 15 mA and 8 V.

  7. What is the collector-emitter breakdown voltage of the BFU550215?

    The collector-emitter breakdown voltage is 12 V.

  8. Is the BFU550215 RoHS compliant?
  9. Where can I find detailed specifications for the BFU550215?

    Detailed specifications can be found on the official NXP website, as well as through authorized distributors like Arrow, Mouser, and Digi-Key.

  10. What are the typical applications of the BFU550215 in the automotive sector?

    In the automotive sector, the BFU550215 is typically used in radar and communication systems.

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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