Overview
The 2SC5551AE-TD-E is a bipolar RF transistor manufactured by onsemi. Although this component is currently obsolete and no longer in production, it was designed for high-frequency and general-purpose amplifier applications. This transistor is part of onsemi's range of RF transistors known for their high performance in various radio frequency circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Polarity | NPN |
| VCEO(sus) Min (V) | 30 |
| IC Continuous (A) | 0.3 |
| hFE Min | 100 |
| hFE Max | 180 |
| PTM Max (W) | 0.2 |
| fT Min (MHz) | 3500 |
| Package Type | SC-59-3 / CP-3 |
| MSL Type | 1 |
| MSL Temp (°C) | 260 |
Key Features
- High-frequency operation with a transition frequency (fT) of 3.5 GHz.
- High current gain (hFE) ranging from 100 to 180.
- Low noise figure, making it suitable for amplifier applications.
- Compact package (SC-59-3 / CP-3) for space-efficient designs.
- Lead-free and RoHS compliant, ensuring environmental sustainability.
Applications
- High-frequency amplifiers in radio and microwave systems.
- General-purpose amplifier circuits requiring high gain and low noise.
- Wireless communication devices, such as mobile phones and base stations.
- Radar and satellite communication systems.
- Other RF and microwave applications where high performance and reliability are crucial.
Q & A
- What is the polarity of the 2SC5551AE-TD-E transistor?
The 2SC5551AE-TD-E is an NPN transistor.
- What is the maximum collector-emitter voltage (VCEO) for this transistor?
The maximum collector-emitter voltage (VCEO) is 30 volts.
- What is the continuous collector current (IC) rating?
The continuous collector current (IC) rating is 0.3 amps.
- What is the transition frequency (fT) of this transistor?
The transition frequency (fT) is 3.5 GHz.
- What package type is the 2SC5551AE-TD-E available in?
The 2SC5551AE-TD-E is available in the SC-59-3 / CP-3 package type.
- Is the 2SC5551AE-TD-E still in production?
No, the 2SC5551AE-TD-E is obsolete and no longer manufactured.
- What are some common applications for this transistor?
Common applications include high-frequency amplifiers, wireless communication devices, radar systems, and other RF and microwave applications.
- What is the current gain (hFE) range for this transistor?
The current gain (hFE) ranges from 100 to 180.
- Is the 2SC5551AE-TD-E RoHS compliant?
- Where can I find substitutes for the 2SC5551AE-TD-E?
Substitutes can be found through distributors like Digi-Key and Mouser, which often list similar products.
