BLT81
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NXP USA Inc. BLT81

Manufacturer No:
BLT81
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RF SMALL SIGNAL BIPOLAR TRANSIST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLT81,115 is a bipolar RF transistor manufactured by NXP USA Inc. This transistor is designed for high-frequency applications, particularly in the UHF range. It is part of the RF Transistors (BJT) category and is known for its high performance and reliability in amplifying or switching electronic signals.

The BLT81 is packaged in TO-261-4 and TO-261AA cases, which are surface mount types, making it suitable for modern electronic circuit designs. The device operates with a maximum collector-emitter voltage breakdown of 9.5V and has a frequency transition of 900MHz, making it ideal for various RF applications.

Key Specifications

Parameter Value
Manufacturer NXP USA Inc.
Transistor Type NPN
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Voltage - Collector Emitter Breakdown (Max) 9.5V
Frequency - Transition 900MHz
Current - Collector (Ic) (Max) 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 300mA, 5V
Power - Max 2W
Operating Temperature (TJ) 175°C
RoHS Status RoHS3 Compliant

Key Features

  • High Frequency Operation: The BLT81 operates at a frequency transition of 900MHz, making it suitable for UHF applications.
  • High Current Capability: The transistor can handle a maximum collector current of 500mA.
  • High Gain: It has a minimum DC current gain (hFE) of 25 at 300mA and 5V.
  • Surface Mount Packaging: Available in TO-261-4 and TO-261AA packages, which are surface mount types, facilitating easy integration into modern electronic designs.
  • High Power Dissipation: The device can dissipate up to 2W of power.
  • RoHS Compliance: The BLT81 is RoHS3 compliant, ensuring environmental sustainability.

Applications

  • RF Amplifiers: The BLT81 is ideal for use in RF amplifiers due to its high frequency transition and current gain.
  • UHF Transceivers: It is suitable for UHF transceiver applications requiring high performance and reliability.
  • Wireless Communication Systems: The transistor can be used in various wireless communication systems that operate in the UHF range.
  • Industrial and Consumer Electronics: It can be integrated into various industrial and consumer electronic devices requiring high-frequency signal amplification or switching.

Q & A

  1. What is the maximum collector-emitter voltage breakdown of the BLT81 transistor?

    The maximum collector-emitter voltage breakdown of the BLT81 transistor is 9.5V.

  2. What is the frequency transition of the BLT81 transistor?

    The frequency transition of the BLT81 transistor is 900MHz.

  3. What is the maximum collector current of the BLT81 transistor?

    The maximum collector current of the BLT81 transistor is 500mA.

  4. What is the minimum DC current gain (hFE) of the BLT81 transistor?

    The minimum DC current gain (hFE) of the BLT81 transistor is 25 at 300mA and 5V.

  5. What type of packaging is available for the BLT81 transistor?

    The BLT81 transistor is available in TO-261-4 and TO-261AA packages, which are surface mount types.

  6. Is the BLT81 transistor RoHS compliant?

    Yes, the BLT81 transistor is RoHS3 compliant.

  7. What is the maximum power dissipation of the BLT81 transistor?

    The maximum power dissipation of the BLT81 transistor is 2W.

  8. What is the operating temperature range of the BLT81 transistor?

    The operating temperature (TJ) of the BLT81 transistor is up to 175°C.

  9. What are some common applications of the BLT81 transistor?

    The BLT81 transistor is commonly used in RF amplifiers, UHF transceivers, wireless communication systems, and various industrial and consumer electronic devices.

  10. Where can I find the datasheet for the BLT81 transistor?

    The datasheet for the BLT81 transistor can be found on the official NXP website, Digi-Key, and other electronic component distributors.

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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