BFU530WF
  • Share:

NXP USA Inc. BFU530WF

Manufacturer No:
BFU530WF
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU530WF is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 3-pin SOT323 package. This transistor is suitable for various radio frequency (RF) applications requiring high performance and reliability.

Key Specifications

ParameterValue
Transistor TypeNPN
PackageSOT323 (3-pin)
Collector-Base Voltage (Vcbo)16 V
Collector-Emitter Voltage (Vceo)16 V
Emitter-Base Voltage (Vebo)6 V
Collector Current (Ic)65 mA
Power Dissipation (Ptot)450 mW
Operating Temperature Range-55°C to 150°C

Key Features

  • High-speed and low-noise performance
  • NPN silicon RF transistor
  • Plastic, 3-pin SOT323 package
  • Suitable for high-frequency applications
  • Low power consumption

Applications

  • Radio Frequency (RF) amplifiers and switches
  • Wireless communication systems
  • Radar and microwave applications
  • Automotive and industrial RF systems

Q & A

  1. Q: What is the package type of the BFU530WF?
    A: The BFU530WF is packaged in a plastic, 3-pin SOT323 package.
  2. Q: What are the typical applications of the BFU530WF?
    A: The BFU530WF is typically used in RF amplifiers, switches, wireless communication systems, radar, and microwave applications.
  3. Q: What is the maximum collector current of the BFU530WF?
    A: The maximum collector current of the BFU530WF is 65 mA.
  4. Q: What is the operating temperature range of the BFU530WF?
    A: The operating temperature range of the BFU530WF is -55°C to 150°C.
  5. Q: Is the BFU530WF suitable for high-frequency applications?
    A: Yes, the BFU530WF is designed for high-speed and low-noise applications, making it suitable for high-frequency use.
  6. Q: What is the power dissipation of the BFU530WF?
    A: The power dissipation of the BFU530WF is 450 mW.
  7. Q: Is the BFU530WF RoHS compliant?
    A: Please refer to the specific datasheet or manufacturer's documentation for RoHS compliance information.
  8. Q: Where can I find detailed specifications and datasheets for the BFU530WF?
    A: Detailed specifications and datasheets can be found on the NXP Semiconductors website or through authorized distributors.
  9. Q: What are the benefits of using the BFU530WF in RF applications?
    A: The BFU530WF offers high-speed and low-noise performance, making it ideal for applications requiring high reliability and performance.
  10. Q: Can the BFU530WF be used in automotive applications?
    A: Yes, the BFU530WF can be used in automotive RF systems due to its robust performance and reliability.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):1.1dB @ 1.8GHz
Gain:12.5dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 8V
Current - Collector (Ic) (Max):40mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

$0.18
803

Please send RFQ , we will respond immediately.

Same Series
BFU530WF
BFU530WF
RF TRANS NPN 12V 11GHZ SOT323-3

Similar Products

Part Number BFU530WF BFU530WX BFU520WF
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 11GHz 11GHz 10GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz 0.6dB @ 900MHz 1dB @ 1.8GHz
Gain 12.5dB 18.5dB 13dB
Power - Max 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 8V 60 @ 10mA, 8V 60 @ 5mA, 8V
Current - Collector (Ic) (Max) 40mA 40mA 30mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70 SC-70

Related Product By Categories

BFU790F,115
BFU790F,115
NXP USA Inc.
RF TRANS NPN 2.8V 25GHZ 4DFP
BFU520XRR
BFU520XRR
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143R
BFU520X215
BFU520X215
NXP USA Inc.
NPN RF TRANSISTOR
2SC5226A-4-TL-E
2SC5226A-4-TL-E
onsemi
RF TRANS NPN 10V 7GHZ 3MCP
BFU550XVL
BFU550XVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFQ67,215
BFQ67,215
NXP USA Inc.
RF TRANS NPN 10V 8GHZ TO236AB
BFG541,115
BFG541,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT223
BFR520T,115
BFR520T,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SC75
BFG135,115
BFG135,115
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT223
BFR92AW,115
BFR92AW,115
NXP USA Inc.
RF TRANS NPN 15V 5GHZ SOT323-3
BFR 93AW E6327
BFR 93AW E6327
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
LM3046MX/NOPB
LM3046MX/NOPB
Texas Instruments
RF TRANS 5 NPN 15V 14SOIC

Related Product By Brand

BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MKE04Z128VLH4
MKE04Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
LPC55S28JBD64K
LPC55S28JBD64K
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 64HTQFP
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
74HC259N,652
74HC259N,652
NXP USA Inc.
IC ADDRESSABLE LATCH 8BIT 16DIP
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
PCA85133U/2DA/Q1Z
PCA85133U/2DA/Q1Z
NXP USA Inc.
IC DRVR 7 SEGMENT DIE
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,