BFU530WF
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NXP USA Inc. BFU530WF

Manufacturer No:
BFU530WF
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU530WF is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 3-pin SOT323 package. This transistor is suitable for various radio frequency (RF) applications requiring high performance and reliability.

Key Specifications

ParameterValue
Transistor TypeNPN
PackageSOT323 (3-pin)
Collector-Base Voltage (Vcbo)16 V
Collector-Emitter Voltage (Vceo)16 V
Emitter-Base Voltage (Vebo)6 V
Collector Current (Ic)65 mA
Power Dissipation (Ptot)450 mW
Operating Temperature Range-55°C to 150°C

Key Features

  • High-speed and low-noise performance
  • NPN silicon RF transistor
  • Plastic, 3-pin SOT323 package
  • Suitable for high-frequency applications
  • Low power consumption

Applications

  • Radio Frequency (RF) amplifiers and switches
  • Wireless communication systems
  • Radar and microwave applications
  • Automotive and industrial RF systems

Q & A

  1. Q: What is the package type of the BFU530WF?
    A: The BFU530WF is packaged in a plastic, 3-pin SOT323 package.
  2. Q: What are the typical applications of the BFU530WF?
    A: The BFU530WF is typically used in RF amplifiers, switches, wireless communication systems, radar, and microwave applications.
  3. Q: What is the maximum collector current of the BFU530WF?
    A: The maximum collector current of the BFU530WF is 65 mA.
  4. Q: What is the operating temperature range of the BFU530WF?
    A: The operating temperature range of the BFU530WF is -55°C to 150°C.
  5. Q: Is the BFU530WF suitable for high-frequency applications?
    A: Yes, the BFU530WF is designed for high-speed and low-noise applications, making it suitable for high-frequency use.
  6. Q: What is the power dissipation of the BFU530WF?
    A: The power dissipation of the BFU530WF is 450 mW.
  7. Q: Is the BFU530WF RoHS compliant?
    A: Please refer to the specific datasheet or manufacturer's documentation for RoHS compliance information.
  8. Q: Where can I find detailed specifications and datasheets for the BFU530WF?
    A: Detailed specifications and datasheets can be found on the NXP Semiconductors website or through authorized distributors.
  9. Q: What are the benefits of using the BFU530WF in RF applications?
    A: The BFU530WF offers high-speed and low-noise performance, making it ideal for applications requiring high reliability and performance.
  10. Q: Can the BFU530WF be used in automotive applications?
    A: Yes, the BFU530WF can be used in automotive RF systems due to its robust performance and reliability.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):1.1dB @ 1.8GHz
Gain:12.5dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 8V
Current - Collector (Ic) (Max):40mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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Same Series
BFU530WX
BFU530WX
RF TRANS NPN 12V 11GHZ SOT323-3

Similar Products

Part Number BFU530WF BFU530WX BFU520WF
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V
Frequency - Transition 11GHz 11GHz 10GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz 0.6dB @ 900MHz 1dB @ 1.8GHz
Gain 12.5dB 18.5dB 13dB
Power - Max 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 8V 60 @ 10mA, 8V 60 @ 5mA, 8V
Current - Collector (Ic) (Max) 40mA 40mA 30mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70 SC-70

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