BFT92W,115
  • Share:

NXP USA Inc. BFT92W,115

Manufacturer No:
BFT92W,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS PNP 15V 4GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFT92W,115 is a high-performance PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for RF applications and features a wideband frequency range, making it suitable for various high-frequency electronic systems. The device is packaged in a SOT-23 (SC-70) surface-mount package, which is compact and suitable for modern electronic designs.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Maximum Collector-Emitter Voltage (Vceo)20V
Maximum Collector-Base Voltage (Vcbo)20V
Maximum Emitter-Base Voltage (Vebo)5V
Maximum Collector Current (Ic)35mA
Maximum Power Dissipation (Pd)300mW
Junction Temperature (Tj)175°C
Test Frequency500MHz
Transistor Case StyleSOT-23 (SC-70)
Package TypeSurface Mount Device
Pin ConfigurationB(1) E(2) C(3)

Key Features

  • Wideband frequency range up to 4 GHz, making it suitable for RF applications.
  • PNP bipolar junction transistor with high current gain.
  • Compact SOT-23 (SC-70) surface-mount package for space-efficient designs.
  • Maximum collector current of 35mA and maximum power dissipation of 300mW.
  • Low noise figure, typically 2.5dB at 500MHz.

Applications

The BFT92W,115 is ideal for various RF and high-frequency applications, including:

  • RF amplifiers and oscillators.
  • Wireless communication systems.
  • High-frequency signal processing circuits.
  • Automotive and industrial electronic systems requiring high reliability and performance.

Q & A

  1. What is the maximum collector-emitter voltage of the BFT92W,115?
    The maximum collector-emitter voltage (Vceo) is 20V.
  2. What is the package type of the BFT92W,115?
    The BFT92W,115 is packaged in a SOT-23 (SC-70) surface-mount package.
  3. What is the maximum power dissipation of the BFT92W,115?
    The maximum power dissipation (Pd) is 300mW.
  4. What is the typical noise figure of the BFT92W,115?
    The typical noise figure is 2.5dB at 500MHz.
  5. What is the maximum junction temperature of the BFT92W,115?
    The maximum junction temperature (Tj) is 175°C.
  6. What is the pin configuration of the BFT92W,115?
    The pin configuration is B(1) E(2) C(3).
  7. What are the typical applications of the BFT92W,115?
    The BFT92W,115 is typically used in RF amplifiers, oscillators, wireless communication systems, and high-frequency signal processing circuits.
  8. What is the maximum collector current of the BFT92W,115?
    The maximum collector current (Ic) is 35mA.
  9. Is the BFT92W,115 RoHS compliant?
    Yes, the BFT92W,115 is RoHS compliant.
  10. What is the frequency range of the BFT92W,115?
    The BFT92W,115 has a wideband frequency range up to 4 GHz.

Product Attributes

Transistor Type:PNP
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:4GHz
Noise Figure (dB Typ @ f):2.5dB ~ 3dB @ 500MHz ~ 1GHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 15mA, 10V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

-
109

Please send RFQ , we will respond immediately.

Similar Products

Part Number BFT92W,115 BFT93W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 15V 12V
Frequency - Transition 4GHz 4GHz
Noise Figure (dB Typ @ f) 2.5dB ~ 3dB @ 500MHz ~ 1GHz 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 15mA, 10V 20 @ 30mA, 5V
Current - Collector (Ic) (Max) 25mA 50mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70

Related Product By Categories

BFU520X215
BFU520X215
NXP USA Inc.
NPN RF TRANSISTOR
BFU520R
BFU520R
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
MMBT918LT1G
MMBT918LT1G
onsemi
RF TRANS NPN 15V 600MHZ SOT23-3
BFS17WE6327
BFS17WE6327
Infineon Technologies
RF BIPOLAR TRANSISTOR
BFU550XR215
BFU550XR215
NXP USA Inc.
NPN RF TRANSISTOR
BFR93A215
BFR93A215
NXP USA Inc.
RF BIPOLAR TRANSISTOR
BFQ67W,135
BFQ67W,135
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
BFG505,215
BFG505,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BFT25A,215
BFT25A,215
NXP USA Inc.
RF TRANS NPN 5V 5GHZ TO236AB
MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BFS17WE6327HTSA1
BFS17WE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
BFR93AW,135
BFR93AW,135
NXP USA Inc.
RF TRANS NPN 12V 5GHZ SOT323-3

Related Product By Brand

BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BF909A215
BF909A215
NXP USA Inc.
MOSFET N-CH SOT-143B
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
NX3L1G3157GM,115
NX3L1G3157GM,115
NXP USA Inc.
IC SWITCH SPDT 6XSON
NX3L2267GM,132
NX3L2267GM,132
NXP USA Inc.
IC ANALOG SWITCH SPDT 10XQFN
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
74LVC1G04GW/DG125
74LVC1G04GW/DG125
NXP USA Inc.
INVERTER, LVC/LCX/Z SERIES
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO