BFT92W,115
  • Share:

NXP USA Inc. BFT92W,115

Manufacturer No:
BFT92W,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS PNP 15V 4GHZ SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFT92W,115 is a high-performance PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for RF applications and features a wideband frequency range, making it suitable for various high-frequency electronic systems. The device is packaged in a SOT-23 (SC-70) surface-mount package, which is compact and suitable for modern electronic designs.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Maximum Collector-Emitter Voltage (Vceo)20V
Maximum Collector-Base Voltage (Vcbo)20V
Maximum Emitter-Base Voltage (Vebo)5V
Maximum Collector Current (Ic)35mA
Maximum Power Dissipation (Pd)300mW
Junction Temperature (Tj)175°C
Test Frequency500MHz
Transistor Case StyleSOT-23 (SC-70)
Package TypeSurface Mount Device
Pin ConfigurationB(1) E(2) C(3)

Key Features

  • Wideband frequency range up to 4 GHz, making it suitable for RF applications.
  • PNP bipolar junction transistor with high current gain.
  • Compact SOT-23 (SC-70) surface-mount package for space-efficient designs.
  • Maximum collector current of 35mA and maximum power dissipation of 300mW.
  • Low noise figure, typically 2.5dB at 500MHz.

Applications

The BFT92W,115 is ideal for various RF and high-frequency applications, including:

  • RF amplifiers and oscillators.
  • Wireless communication systems.
  • High-frequency signal processing circuits.
  • Automotive and industrial electronic systems requiring high reliability and performance.

Q & A

  1. What is the maximum collector-emitter voltage of the BFT92W,115?
    The maximum collector-emitter voltage (Vceo) is 20V.
  2. What is the package type of the BFT92W,115?
    The BFT92W,115 is packaged in a SOT-23 (SC-70) surface-mount package.
  3. What is the maximum power dissipation of the BFT92W,115?
    The maximum power dissipation (Pd) is 300mW.
  4. What is the typical noise figure of the BFT92W,115?
    The typical noise figure is 2.5dB at 500MHz.
  5. What is the maximum junction temperature of the BFT92W,115?
    The maximum junction temperature (Tj) is 175°C.
  6. What is the pin configuration of the BFT92W,115?
    The pin configuration is B(1) E(2) C(3).
  7. What are the typical applications of the BFT92W,115?
    The BFT92W,115 is typically used in RF amplifiers, oscillators, wireless communication systems, and high-frequency signal processing circuits.
  8. What is the maximum collector current of the BFT92W,115?
    The maximum collector current (Ic) is 35mA.
  9. Is the BFT92W,115 RoHS compliant?
    Yes, the BFT92W,115 is RoHS compliant.
  10. What is the frequency range of the BFT92W,115?
    The BFT92W,115 has a wideband frequency range up to 4 GHz.

Product Attributes

Transistor Type:PNP
Voltage - Collector Emitter Breakdown (Max):15V
Frequency - Transition:4GHz
Noise Figure (dB Typ @ f):2.5dB ~ 3dB @ 500MHz ~ 1GHz
Gain:- 
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 15mA, 10V
Current - Collector (Ic) (Max):25mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

-
109

Please send RFQ , we will respond immediately.

Similar Products

Part Number BFT92W,115 BFT93W,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 15V 12V
Frequency - Transition 4GHz 4GHz
Noise Figure (dB Typ @ f) 2.5dB ~ 3dB @ 500MHz ~ 1GHz 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain - -
Power - Max 300mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 15mA, 10V 20 @ 30mA, 5V
Current - Collector (Ic) (Max) 25mA 50mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70

Related Product By Categories

BFU520YX
BFU520YX
NXP USA Inc.
RF TRANS 2 NPN 12V 10GHZ SOT363
BFU630F,115
BFU630F,115
NXP USA Inc.
RF TRANS NPN 5.5V 21GHZ 4DFP
BFU790F,115
BFU790F,115
NXP USA Inc.
RF TRANS NPN 2.8V 25GHZ 4DFP
BFU550XVL
BFU550XVL
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT143B
BFU520YF
BFU520YF
NXP USA Inc.
RF TRANS 2 NPN 12V 10GHZ SOT363
BFR540,235
BFR540,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ TO236AB
BFG97,115
BFG97,115
NXP USA Inc.
RF TRANS NPN 15V 5.5GHZ SOT223
BFG520/XR,215
BFG520/XR,215
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143R
BFG520W/X,115
BFG520W/X,115
NXP USA Inc.
RF TRANS NPN 15V 9GHZ 4SO
BFS17TA
BFS17TA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3
BFR92A,215
BFR92A,215
NXP USA Inc.
RF TRANS NPN 15V 5GHZ TO236AB

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
LS1043AXE8QQB
LS1043AXE8QQB
NXP USA Inc.
QORIQ 4XCPU 64-BIT ARM ARCH 1.
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
SC28L202A1DGG/G:11
SC28L202A1DGG/G:11
NXP USA Inc.
IC UART DUAL W/FIFO 56-TSSOP
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD