Overview
The BFG591,115 is an NPN 7 GHz wideband transistor manufactured by NXP USA Inc. This transistor is designed for high-frequency applications and is known for its high power gain, low noise figure, and high transition frequency. It is packaged in a plastic, 4-pin SOT223 package, which includes an increased heatsink for better thermal management.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | - | 20 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | - | 15 | V |
| IC (Collector Current) | - | - | - | 200 | mA |
| Ptot (Total Power Dissipation) | Up to Ts=80°C | - | - | 2 | W |
| hFE (DC Current Gain) | IC=70mA; VCE=8V | 60 | 90 | 250 | - |
| fT (Transition Frequency) | IC=70mA; VCE=12V; f=1GHz | - | - | 7 | GHz |
| GUM (Maximum Unilateral Power Gain) | IC=70mA; VCE=12V; f=900MHz; T amb =25°C | - | - | 13 | dB |
Key Features
- High power gain
- Low noise figure
- High transition frequency of 7 GHz
- Gold metallization for excellent reliability
- Plastic, 4-pin SOT223 package with increased heatsink
Applications
The BFG591,115 is intended for applications in the GHz range, such as MATV (Master Antenna TV) or CATV (Cable TV) amplifiers and RF communications subscriber equipment.
Q & A
- What is the transition frequency of the BFG591,115 transistor? The transition frequency is 7 GHz.
- What is the maximum collector-emitter voltage for the BFG591,115? The maximum collector-emitter voltage is 15 V.
- What is the typical DC current gain of the BFG591,115? The typical DC current gain is 90.
- What is the total power dissipation of the BFG591,115? The total power dissipation is up to 2 W at Ts=80°C.
- What package type does the BFG591,115 use? The BFG591,115 is packaged in a plastic, 4-pin SOT223 package.
- What are the key applications of the BFG591,115? The key applications include MATV or CATV amplifiers and RF communications subscriber equipment.
- What is the collector current limit for the BFG591,115? The collector current limit is 200 mA.
- Does the BFG591,115 have any special features for reliability? Yes, it features gold metallization for excellent reliability.
- What is the maximum unilateral power gain of the BFG591,115? The maximum unilateral power gain is 13 dB.
- Is the BFG591,115 suitable for high-frequency applications? Yes, it is designed for high-frequency applications up to 7 GHz.
