BFU910FX
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NXP USA Inc. BFU910FX

Manufacturer No:
BFU910FX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 9.5V SOT343F
Delivery:
Payment:
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Product Introduction

Overview

The BFU910FX is a bipolar RF transistor produced by NXP USA Inc. This component is designed for high-frequency applications, particularly in the realm of radio frequency (RF) amplification and switching. It is housed in the SOT343F package, making it suitable for a variety of electronic systems that require reliable and efficient RF performance.

Key Specifications

ParameterValue
Transistor TypeNPN
Maximum Collector-Emitter Voltage (Vceo)9.5 V
Maximum Collector-Base Voltage (Vcbo)15 V
Maximum Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)150 mA
Base Current (Ib)50 mA
Transition Frequency (ft)5 GHz
Package TypeSOT343F

Key Features

  • High transition frequency (ft) of 5 GHz, making it suitable for high-frequency applications.
  • Low noise figure, enhancing signal quality.
  • High gain and low distortion, ideal for RF amplification.
  • Compact SOT343F package, suitable for space-constrained designs.
  • Reliable performance in a wide range of temperatures.

Applications

  • RF amplifiers and switches in wireless communication systems.
  • Mobile and base station equipment.
  • Cordless phones and other wireless devices.
  • Industrial and medical RF applications.
  • General-purpose RF circuits requiring high performance and reliability.

Q & A

  1. What is the maximum collector-emitter voltage of the BFU910FX?
    The maximum collector-emitter voltage (Vceo) is 9.5 V.
  2. What is the transition frequency of the BFU910FX?
    The transition frequency (ft) is 5 GHz.
  3. What package type is the BFU910FX housed in?
    The BFU910FX is housed in the SOT343F package.
  4. What are the typical applications of the BFU910FX?
    Typical applications include RF amplifiers, switches in wireless communication systems, mobile and base station equipment, and other wireless devices.
  5. What is the maximum collector current of the BFU910FX?
    The maximum collector current (Ic) is 150 mA.
  6. Is the BFU910FX suitable for high-frequency applications?
    Yes, the BFU910FX is designed for high-frequency applications due to its high transition frequency and low noise figure.
  7. What is the maximum base current of the BFU910FX?
    The maximum base current (Ib) is 50 mA.
  8. What is the maximum emitter-base voltage of the BFU910FX?
    The maximum emitter-base voltage (Vebo) is 5 V.
  9. Is the BFU910FX reliable in various temperature ranges?
    Yes, the BFU910FX is designed to provide reliable performance across a wide range of temperatures.
  10. Where can I find detailed specifications for the BFU910FX?
    Detailed specifications can be found on official NXP websites, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):9.5V
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:13.5dB
Power - Max:300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):15mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-343F
Supplier Device Package:4-DFP
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