BFU520AVL
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NXP USA Inc. BFU520AVL

Manufacturer No:
BFU520AVL
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 10GHZ TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BFU520AVL is an NPN wideband silicon RF transistor manufactured by NXP USA Inc. It is part of the BFU5 family of transistors, designed for small signal to medium power applications up to 2 GHz. This transistor is suitable for a variety of radio frequency (RF) applications due to its wideband capabilities and robust performance characteristics.

Key Specifications

Parameter Value
Transistor Type NPN Wideband Silicon RF Transistor
Package SOT-23 (TO-236AB)
Collector-Emitter Voltage (Vce) 12 V
Collector Current (Ic) 40 mA
Frequency Range Up to 11 GHz
Power Dissipation (Pd) 450 mW
Operating Temperature Range -40°C to +150°C (Tj)

Key Features

  • Wideband operation up to 11 GHz, making it suitable for various RF applications.
  • High collector current of 40 mA and collector-emitter voltage of 12 V.
  • Low power dissipation of 450 mW, enhancing efficiency in power-sensitive applications.
  • Surface mount SOT-23 package for compact and reliable mounting.
  • Wide operating temperature range from -40°C to +150°C (Tj), ensuring robust performance under diverse conditions.

Applications

The BFU520AVL is versatile and can be used in a variety of RF applications, including:

  • RF amplifiers and switches.
  • Wireless communication systems.
  • Radar and microwave systems.
  • Test and measurement equipment.
  • General-purpose RF circuits requiring wideband operation.

Q & A

  1. What is the maximum frequency range of the BFU520AVL transistor?

    The BFU520AVL transistor operates up to a frequency range of 11 GHz.

  2. What is the collector-emitter voltage (Vce) of the BFU520AVL?

    The collector-emitter voltage (Vce) of the BFU520AVL is 12 V.

  3. What is the package type of the BFU520AVL transistor?

    The BFU520AVL transistor comes in a SOT-23 (TO-236AB) package.

  4. What is the power dissipation (Pd) of the BFU520AVL transistor?

    The power dissipation (Pd) of the BFU520AVL transistor is 450 mW.

  5. What is the operating temperature range of the BFU520AVL transistor?

    The operating temperature range of the BFU520AVL transistor is from -40°C to +150°C (Tj).

  6. What are some common applications of the BFU520AVL transistor?

    The BFU520AVL transistor is commonly used in RF amplifiers, wireless communication systems, radar and microwave systems, test and measurement equipment, and general-purpose RF circuits.

  7. Is the BFU520AVL transistor suitable for high-power applications?

    No, the BFU520AVL transistor is designed for small signal to medium power applications.

  8. Where can I find design files and models for the BFU520AVL transistor?

    Design files and models for the BFU520AVL transistor can be found on the NXP Semiconductors website, including SPICE models and S-parameters.

  9. Is the BFU520AVL transistor RoHS compliant?

    Yes, the BFU520AVL transistor is RoHS compliant.

  10. What is the typical collector current (Ic) of the BFU520AVL transistor?

    The typical collector current (Ic) of the BFU520AVL transistor is 40 mA.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:10GHz
Noise Figure (dB Typ @ f):1dB @ 1.8GHz
Gain:12.5dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 8V
Current - Collector (Ic) (Max):30mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Same Series
BFU520AVL
BFU520AVL
RF TRANS NPN 12V 10GHZ TO236AB

Similar Products

Part Number BFU520AVL BFU550AVL BFU520VL BFU520XVL BFU530AVL
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V 12V 12V
Frequency - Transition 10GHz 11GHz 10.5GHz 10.5GHz 11GHz
Noise Figure (dB Typ @ f) 1dB @ 1.8GHz 1.4dB @ 1.8GHz 1.1dB @ 1.8GHz 1.1dB @ 1.8GHz 1.1dB @ 1.8GHz
Gain 12.5dB 12dB 17.5dB 18dB 12dB
Power - Max 450mW 450mW 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 8V 60 @ 15mA, 8V 60 @ 5mA, 8V 60 @ 5mA, 8V 60 @ 10mA, 8V
Current - Collector (Ic) (Max) 30mA 50mA 30mA 30mA 40mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-253-4, TO-253AA TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-143B SOT-143B SOT-23 (TO-236AB)

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